Allicdata Part #: | MMBT5551-7DITR-ND |
Manufacturer Part#: |
MMBT5551-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 160V 0.6A SMD SOT23-3 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 300... |
DataSheet: | MMBT5551-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 300mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MMBT5551 |
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The MMBT5551-7 is a bipolar junction transistor (BJT) specifically classified as a single BJT. Its application fields and working mechanism are incredibly versatile and helpful in a variety of electronic circuit designs and applications.
MMBT5551-7 is known for its medium power application fields, and it is commonly used as an amplifier or driver in devices that have medium and high frequency working ranges. This is because it has a wide frequency range, good security and fast switching speed, thus enabling the device to remain stable and secure while having excellent performance.
It has a low noise design with integrated static protection that increases reliability and energy efficiency. One of the MMBT5551-7’s strengths is its high voltage capacity, which allows it to handle voltages up to 150V, making it suitable for a range of applications. It is also durable, as it is rated for a power dissipation of up to 500mA for both pulsed and continuous usage, and it can operate up to a maximum temperature of 175 ° C.
The working principle of the MMBT5551-7 is the same as that of any other BJT. It consists of three regions: a base, an emitter, and a collector. When a voltage is applied to the base terminal, current flows from the collector to the emitter, forming an open circuit. This is referred to as the forward active mode of conduction, in which the collector current is proportional to the base current.
The reverse active mode of conduction is also possible with the MMBT5551-7. In this mode, no current flows through the emitter and collector junction, but current can still flow through the transistor. This is useful in applications where a reverse voltage needs to be blocked, such as in a voltage clamp circuit. In addition, the transistor can be used as a switch to control the flow of current.
The MMBT5551-7 is an invaluable tool to anyone who is designing circuits and applications that require BJTs. Its wide frequency range, low noise design and high voltage capacity make it an excellent choice for a number of applications, from amplifiers and drivers to voltage clamps and switches. With its high level of integration and reliability, the MMBT5551-7 is an ideal choice for any BJT application.
The specific data is subject to PDF, and the above content is for reference
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