MMIX1X100N60B3H1 Discrete Semiconductor Products |
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Allicdata Part #: | MMIX1X100N60B3H1-ND |
Manufacturer Part#: |
MMIX1X100N60B3H1 |
Price: | $ 13.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 145A 400W SMPD |
More Detail: | IGBT 600V 145A 400W Surface Mount 24-SMPD |
DataSheet: | MMIX1X100N60B3H1 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
20 +: | $ 12.70270 |
Series: | GenX3™, XPT™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 145A |
Current - Collector Pulsed (Icm): | 440A |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 70A |
Power - Max: | 400W |
Switching Energy: | 1.9mJ (on), 2mJ (off) |
Input Type: | Standard |
Gate Charge: | 143nC |
Td (on/off) @ 25°C: | 30ns/120ns |
Test Condition: | 360V, 70A, 2 Ohm, 15V |
Reverse Recovery Time (trr): | 140ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 24-PowerSMD, 21 Leads |
Supplier Device Package: | 24-SMPD |
Base Part Number: | IXX*N60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MMIX1X100N60B3H1 is a single IGBT device from the line of transistors. Its features include collector-emitter voltage of 600 V, collector current of 43 A, rated as a positive current, gate-emitter voltage of 20 V and an ambient temperature range between -40 and 125 degrees Celsius. This makes the device suitable for a wide range of uses.
Application features: This single IGBT transistor device is primarily used in power converters and industrial motor control applications, such as those found in CNC machining tools, robots, drives and power supplies. Working in harsh conditions, the device\'s main feature is that it has a low switching loss and reduced electromagnetic interference (EMI).
In addition to the low switching loss and EMI, the MMIX1X100N60B3H1 offers a high-voltage construction, as well as high-frequency operation. The device is capable of handling up to 600 volts of collector-emitter (dc) or 400 volts of collector-emitter (ac), making it suitable for a wide range of industrial applications. This single IGBT is also suitable for operation at a frequency of up to 15kHz, making it an ideal choice for high-frequency applications.
Working principle: The single IGBT works by utilizing a special structure to overcome the limitations of traditional bipolar devices. This structure is formed by two pairs of diodes and one junction gate, which enable full control of the output current. The gate terminals of the device allow the user to control the operation of the device. When the gate voltage is lower than the threshold voltage, the current flow through the device is blocked. Conversely, when the gate voltage is higher than the threshold voltage, the current flow through the device is enabled.
The resulting output current can be controlled by modulating the gate voltage. This method of controlling the output current enables the MMIX1X100N60B3H1 device to be used in various applications, as it can deliver power efficiently and with minimal losses. The device also offers excellent anti-interference performance and a wide operating temperature range.
MMIX1X100N60B3H1 is an advanced device that can be used in a wide range of applications, from industrial motor control to power converters and more. With its low switching loss and EMI, its high-voltage construction and its ability to operate at both high and low frequencies, the MMIX1X100N60B3H1 is an outstanding choice for industrial and power applications.
The specific data is subject to PDF, and the above content is for reference
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