MMIX1F210N30P3

Drain to Source Voltage (Vdss):	300V
Current - Continuous Drain (Id) @ 25°C:	108A (Tc)
Rds On (Max) @ Id, Vgs:	16 mOhm @ 105A, 10V
Vgs(th) (Max) @ Id:	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds:	16200pF @ 25V
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	Surface Mount
Supplier Device Package:	24-SMPD
Package / Case:	24-PowerSMD, 21 Leads
Series:	HiPerFET™, Polar3™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)

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MMIX1F210N30P3 Application Field and Working PrincipleMMIX1F210N30P3 is a type of field-effect transistor, also known as a FET, or MOSFET, which stands for metal-oxide semiconductor field-effect transistor. This type of transistor is a type of voltage-controlled switch, used to transfer electrical signals from input devices, such as a microcomputer, to output devices, such as a motor. This type of FET is a single device, which means it does not contain an integrated circuit to control it, but instead relies on electrostatic field for conduction.MMIX1F210N30P3 is a MOSFET transistor, with a drain current of 210 Amps, a drain-source voltage of 30V, and a power dissipation of 3W. It is a very high-performance transistor and is ideal for applications in the industrial field, suitable for the control of high current loads and the switching of heavy loads.The working principle of the MMIX1F210N30P3 MOSFET transistor is simple and efficient. A voltage is applied to a gate terminal which produces an electric field, resulting in the electrons of the transistor channel flowing from the source to the drain giving off an output current. The strength of this output current is proportional to the voltage applied to the gate terminal, providing greater control over the application of power.This type of transistor is advantageous as it allows low-power input signals to control high-power output loads. The gate voltage is very low, typically ranging from 0.3 volts up to 10 volts, providing good control and making it suitable for the control of high-power electronics. Its low gate voltage eliminates any risk of short circuits and ensures increased safety.The MMIX1F210N30P3 MOSFET transistor also offers good energy efficiency and is highly reliable in operation. Its low gate voltage and low thermal resistance ensure that any heat generated internally is kept to a minimum, making it ideal for applications where heat dissipation is a concern. Its high current carrying capacity and robust construction mean it also provides impressive longevity and less power waste.The MMIX1F210N30P3 MOSFET transistor is very useful in industrial applications, such as for power electronics, motor control, switching regulator control, and UPS systems. It offers high efficiency, low power dissipation, and excellent electrical characteristics, making it a popular choice for power applications in the industrial sector. It is also suitable for applications requiring high current levels, making it ideal for larger equipment such as motors and pumps.In conclusion, the MMIX1F210N30P3 MOSFET transistor is a versatile and reliable device, offering excellent control and power efficiency. Its low gate voltage and robust construction makes it suitable for a wide range of industrial applications, providing good current capacity and high energy efficiency over an extended period of time.

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