MMIX1Y100N120C3H1

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MMIX1Y100N120C3H1 is a single IGBT transistor developed by Shindengen Electric Company. It is composed of an N-channel IGBT with a built-in anti-parallel diode and an integrated gate drive circuit. The transistor is ideal for the power switching applications, such as motor drive, DC servo motor, robotic controls and etc. The main features of this device are high voltage, low on-state voltage drop and low gate charge.

The device comes in a TO-220/TO-247 package for efficient electrical performance with low thermal resistance of 2.4 ̊C/W. It also has an integrated drive circuit and feedback resistor for sleep mode and other control functions. The breaking capacity of this device is 1.36 kA at 85 ̊C and the blocking voltage is 100 V. The current can be switched on and off quickly with positive and negative currents, and the power dissipation is maximum of 0.85 W.

The working principle of MMIX1Y100N120C3H1 lies in the electrical characteristics that occur when an IGBT is in an on or off state. When the IGBT is in an on state, the collector is connected to the emitter and the gate draws current. This current is what controls the on and off state of the IGBT. The gate current, in combination with the current flow through the collector and emitter, produces a current-voltage characteristic that is characterized mostly by the reverse breakdown voltage and saturation voltage.

For MMIX1Y100N120C3H1, the reverse breakdown voltage is 100V, and the saturation voltage is around 0.32V @ 500mA, 3V@1A. The voltage losses in this device are also very low, less than 0.5V @ 500mA. The device will remain in the on state until the gate voltage falls below the threshold voltage of around -1V. When the gate voltage falls below -1V, the IGBT will turn off.

MMIX1Y100N120C3H1 is widely used in the fields of motor drive, DC servo motor, robotic controls, AC and DC inverter, converter, UPS systems, welding machines and other power switching applications. The low on-state voltage drop and low gate charge makes it a great choice for these applications. It reduces the power dissipation and has a stable voltage across the load. With its integrated gate drive circuit and feedback resistor, it can be used to accurately control the switching of current in a power control system.

In conclusion, MMIX1Y100N120C3H1 is a single IGBT transistor that offers high voltage, low on-state voltage drop and low gate charge. It can be used in a variety of power switching applications, such as motor drive, DC servo motor, robotic controls, AC and DC inverter, and more. The device has an integrated drive circuit and feedback resistor for sleep mode and other control functions. It is an efficient electrical device that reduces power dissipation and provides a stable voltage across the load.

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