MMIX1T550N055T2 Allicdata Electronics
Allicdata Part #:

MMIX1T550N055T2-ND

Manufacturer Part#:

MMIX1T550N055T2

Price: $ 26.72
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 55V 550A SMPD
More Detail: N-Channel 55V 550A (Tc) 830W (Tc) Surface Mount 24...
DataSheet: MMIX1T550N055T2 datasheetMMIX1T550N055T2 Datasheet/PDF
Quantity: 1000
20 +: $ 24.28680
Stock 1000Can Ship Immediately
$ 26.72
Specifications
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
FET Feature: --
Power Dissipation (Max): 830W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 24-SMPD
Package / Case: 24-PowerSMD, 21 Leads
Series: FRFET®, SupreMOS®
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
Description

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The MMIX1T550N055T2 Transistor is a single-FET (Field-Effect Transistor). It is commonly used in applications that require either single-gate or dual-gate MOSFET transistors, as this type of transistor can provide both functions. As with all transistors, the MMIX1T550N055T2 is used to perform digital and analog switching, amplification, and signal buffering. It is also a good choice for constructing logic circuits due to its low capacitance, low on-resistance, and fast switching characteristics.

The MMIX1T550N055T2 incorporates a P-Channel Enhancement FET (EFET) in its device structure. This means that the output voltage of the device is determined by the gate-source voltage. When this gate-source voltage is applied, electrons tunnel through the oxide of the FET, thus allowing the current to flow between the source and the drain of the transistor. When a negative gate-source voltage is applied, the process is reversed, and current stops flowing.

Due to its fast switching characteristics, the MMIX1T550N055T2 is particularly useful for high-speed logic circuits where speed can be critical. Its low capacitance makes it ideal for applications that require low noise and low distortion, while its low on-resistance makes it an excellent choice for power control applications. It is also versatile enough to be used in any application where a low-power FET transistor is required.

The MMIX1T550N055T2 can be used in a variety of applications. It is commonly used in power control, such as power supplies and system power management, as well as for analog switching, control and protection to ensure long term reliability, and for driving digital circuits. It is also used in radio frequency (RF) applications, particularly when the circuit requires low distortion and noise. In addition, it is often used in motor control and power management applications, as well as for high-speed, low-current logic circuits.

The MMIX1T550N055T2 is also commonly used in automotive and commercial applications, as it is suitable for a wide range of environmental conditions. The device is often specified in designs requiring power supplies and variable power control, where its high switching speed and low dissipation characteristics make it the ideal choice.

In conclusion, the MMIX1T550N055T2 is an excellent choice for any application that requires a reliable, low-power FET transistor. It can provide a wide range of fast switching and low capacitance characteristics, making it a good choice for both analog and digital applications. Its low on-resistance makes it ideal for power control applications, and its fast switching time makes it an ideal choice for high-speed logic circuits. It is also a good choice for automotive and commercial applications, as it is capable of withstanding harsh environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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