Allicdata Part #: | MMIX1X200N60B3-ND |
Manufacturer Part#: |
MMIX1X200N60B3 |
Price: | $ 22.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 223A 625W SMPD |
More Detail: | IGBT PT 600V 223A 625W Surface Mount 24-SMPD |
DataSheet: | MMIX1X200N60B3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
20 +: | $ 20.10680 |
Series: | GenX3™, XPT™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 223A |
Current - Collector Pulsed (Icm): | 1000A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 100A |
Power - Max: | 625W |
Switching Energy: | 2.85mJ (on), 2.9mJ (off) |
Input Type: | Standard |
Gate Charge: | 315nC |
Td (on/off) @ 25°C: | 48ns/160ns |
Test Condition: | 360V, 100A, 1 Ohm, 15V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 24-PowerSMD, 21 Leads |
Supplier Device Package: | 24-SMPD |
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Introduction
MMIX1X200N60B3 is a Single IGBT (Insulated Gate Bipolar Transistor (IGBT)) developed by Sumitomo Electric Industries, Ltd. It is a power semiconductor which can switch high-level currents with low loss at higher voltage levels.The device is designed to handle high power signals and provides noise suppression and protection from high frequency disturbances. It is also designed to protect from dielectric breakdown and is suitable for use in digital electronic applications. This article will review the application field and working principle of the MMIX1X200N60B3.
Application Fields
The MMIX1X200N60B3 is suitable for applications in digital electronic devices and is primarily used for controlling high current signals in applications such as high power switching, DC motor control, and energy storage systems. It is capable of switching high currents with low loss and is well-suited for communications circuits, interface control, and driver circuits. The device can also be used in power electronics applications such as switch mode power supplies and choppers. It is useful for circuits that require protection from high-frequency noise, and it can provide protection against dielectric breakdown. Additionally, the MMIX1X200N60B3 can be used in automotive, aerospace, and industrial applications.
Working Principle
The MMIX1X2 00N60B3 is a Single IGBT and is based on the HiperFET family of devices. It utilizes a hybrid structure consisting of a PNPN vertical structure and a high power low voltage MOSFET. The vertical structure reduces the on-state voltage and improves switching performance, while the high power low voltage MOSFET provides high current switching capability. The device is capable of handling high power signals and is capable of operating at up to 600V without exceeding the allowable rating. It is designed to handle up to 200A of current and offers excellent noise suppression, thermal stability, and dielectric breakdown protection. The device has low switching losses and offers protection against over-voltage, over-current, and short circuit conditions.
The operation of the MMIX1X200N60B3 relies on the principle of the Insulated Gate Bipolar Transistor (IGBT). It is a type of power semiconductor which utilizes a high voltage insulated gate to control the flow of current. When a positive voltage is applied to the gate, the negative charge on the surface of the gate creates an electric field which repels the negatively charged carriers in the PNPN structure. This reduces the resistance of the device and allows the electric current to flow. When a negative voltage is applied to the gate, the carriers are repelled, creating a high impedance and preventing the current from flowing.
Conclusion
The MMIX1X200N60B3 is a Single IGBT designed for high power applications, such as power electronics, automotive, and industrial applications. It is capable of switching high currents with low losses and has excellent noise suppression and protection from high frequency disturbances. It also offers protection against dielectric breakdown, over-voltage, over-current, and short circuit conditions. The operation of the device relies on the principle of IGBTs and utilizes a high voltage insulated gate to control the flow of current.
The specific data is subject to PDF, and the above content is for reference
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