MMIX1F132N50P3

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Transistors - FETs, MOSFETs - Single

The MMIX1F132N50P3 is a three-terminal field effect power transistor (FET) belonging to the family of metallic oxide semiconductor field-effect transistors (MOSFETs). This N-channel transistor, with an integrated anti-parallel source drain diode, is mainly used in various applications such as power switching, audio amplifier, battery chargers, and low-frequency power supplies.

The MMIX1F132N50P3 FET features a maximum voltage rating of 50 volts, and a maximum continuous current rating of 133 amps. Its typical on-resistance is 1.7 milliohm, and the gate voltage needed to switch it from cut-off to its on-state is 4.5 volts. Its maximum junction temperature is 175° Celsius and it is available in most TO-220 packages.

Working Principle

The MMIX1F132N50P3 works by controlling the flow of electrons over an insulated gate. This gate is insulated from the channel by an oxide layer, which is naturally created by the FET. In its off-state, the gate does not produce any current. When the gate is supplied with positive voltage, it attracts electrons, allowing the electrons to pass through the source-drain channel. By varying this voltage, the current passing through the channel can be controlled.

The gate also features an anti-parallel source-drain diode, which is designed to limit the voltage in the reverse direction, i.e. when the source is higher than the drain. This diode helps to protect the circuit from damage due to the reverse voltage.

Applications

The MMIX1F132N50P3 is mainly used for switching applications, including high-frequency power supply, audio amplifier, battery chargers, and low-frequency power supplies. It is also used as a power transistor in automotive, consumer electronics, industrial, and telecommunications applications. The FET is typically used in applications where low on-resistance and low gate voltage requirements are needed.

The MMIX1F132N50P3 is also suitable for use in high-power motor control, drive systems in automotive applications, solar photovoltaic power supplies, and power converters. The FET\'s high-switching efficiency also makes it suitable for multiplexing applications.

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