Allicdata Part #: | MMIX1X340N65B4-ND |
Manufacturer Part#: |
MMIX1X340N65B4 |
Price: | $ 28.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | IGBT 650V 450A 1200W Surface Mount 24-SMPD |
DataSheet: | MMIX1X340N65B4 Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 26.27040 |
Series: | XPT™, GenX4™ |
Part Status: | Active |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 450A |
Current - Collector Pulsed (Icm): | 1200A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 160A |
Power - Max: | 1200W |
Switching Energy: | 4.4mJ (on), 3.5mJ (off) |
Input Type: | Standard |
Gate Charge: | 553nC |
Td (on/off) @ 25°C: | 62ns/245ns |
Test Condition: | 400V, 100A, 1 Ohm, 15V |
Reverse Recovery Time (trr): | 76ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 24-PowerSMD, 21 Leads |
Supplier Device Package: | 24-SMPD |
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MMIX1X340N65B4 is a type of Insulated-Gate Bipolar Transistor (IGBT) from the Single family of devices. The Single family transistors are generally used for switching and amplification applications. MMIX1X340N65B4 is mostly used for Interconnects and Power Distribution related applications.
In terms of working principle, the MMIX1X340N65B4 utilizes IGBT technology in its overall operations. IGBT is a combination of Bipolar Junction Transistor (BJT) and field Effect Transistors (FET) which improves its switching time. The transistor is composed of three main parts: the emitter, base, and collector. In the IGBT, electrical current is able to flow from the collector to the emitter when a voltage is applied to the base. Meanwhile, the gate is shielded from the ohmic region, so current controls the flow via the gate only.
In circuit design, the MMIX1X340N65B4 can be employed in various ways depending on the application’s requirements. This can help reduce the power dissipation of the transistor as well as improve the system’s efficiency. For instance, one can use the device to construct a full-bridge power switch. To achieve this, four MMIX1X340N65B4 transistors are utilized and connected in a Bridge configuration which allows the circuit to switch DC power sources in the range of 600 to 900 Volts.
Another application of the MMIX1X340N65B4 is in the implementation of a three-phase rectification. Along with three single transistors, this can also be achieved with a single three-phase bridge rectifier. The three-phase bridge rectifier are then connected in a bridge configuration capable of handling up to 930 Volts. By using the IGBTs, the MMIX1X340N65B4 can help reduce the losses and improve the efficiency of the system.
In conclusion, the MMIX1X340N65B4 is a popular type of IGBT which can be utilized for various applications in the field of power interconnects and distribution. Its ability to switch with great speed and efficiency under 600V-900V makes it an ideal choice for full-bridge power switches and three-phase rectification circuits.
The specific data is subject to PDF, and the above content is for reference
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