MMIX1F180N25T

MMIX1F180N25T is an N-channel enhancement mode MOSFET transistor that has a wide range of applications in integrated circuits, power amplifiers, and data switches. It is a low on-state resistance transistor and available in miniature through-hole package. Its high level temperature and power rating makes it a reliable and suitable choice for a variety of applications.

Features

• A Standard gate threshold voltage
• High breakdown voltage
• Low on-state resistance
• Low gate to source current and leakage
• Fast switching speed
• High-energy transients

Application Fields

The MMIX1F180N25T has various industrial applications. It is mainly used for integrated circuits, power amplifiers, and data switches. It can also be used in applications such as lightning protection, relay drivers, gate drivers, precision temperature control, high efficiency switching, and power MOSFETs.

In the integrated circuit sector, this transistor is used mainly to provide high level temperature and power rating in a wide range of applications. It is also used as a power amplifier and switch. It can be used as a boost regulator in automotive and audio/video applications such as car stereos and home theaters. In the relay driver and gate driver sector, this transistor is used in the control and management of electrical circuits.

In the precision temperature control sector, this transistor is used to maintain temperature control in a variety of industrial and commercial applications. Its high current handing capability is well suited for long run and high power applications. In the high efficiency switching sector, the MMIX1F180N25T is used to provide high power with low output currents for various switching applications. Last, in the power MOSFET sector, this transistor is used for its excellent voltage/current handling capabilities.

Working Principle

MMIX1F180N25T transistors use metal-oxide-semiconductor field effect technology (MOSFET). MOSFETs are used in integrated circuits and range in size from microscopic to millimeters. This transistor works by allowing a small electrical current from the gate to the drain within the N-channel.

MOSFETs are unipolar transistors which means that both the source and the drain are connected to one type of charge carrier, typically electrons. The metal-oxide layer or "gate" is charged with the opposite type of charge carrier, typically positive electrons called holes. When these charges are introduced to the gate, they alter the threshold voltage of the transistor allowing current to flow from the source to the drain.

Conclusion

MMIX1F180N25T is a reliable N-channel enhancement mode MOSFET transistor that is available in a variety of applications. It is most widely used in integrated circuits, power amplifiers, and data switches. Its high level temperature and power rating make it a suitable choice for a variety of applications. Its working principle is based on the metal-oxide-semiconductor field effect technology MOSFET which allows a small electrical current from the gate to the drain. This transistor is a popular choice for its fast switching speed, high-energy transients, and low on-state resistance.