Allicdata Part #: | MMIX1F160N30T-ND |
Manufacturer Part#: |
MMIX1F160N30T |
Price: | $ 25.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 102A SMPD |
More Detail: | N-Channel 300V 102A (Tc) 570W (Tc) Surface Mount 2... |
DataSheet: | MMIX1F160N30T Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 23.49580 |
Series: | GigaMOS™, HiperFET™, TrenchT2™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 102A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 335nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 570W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 24-SMPD |
Package / Case: | 24-PowerSMD, 21 Leads |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MMIX1F160N30T, also known as a high power MOSFET, is a high voltage insulated gate field-effect transistor. It\'s a type of transistor that uses an electric gate to control the conductivity of a semiconductor material. It\'s the most commonly used type of field-effect transistor in modern electronics.
A MMIX1F160N30T is a n-type enhancement mode MOSFET, meaning that the transistor turns on when there is an electric field in the gate. It has a large collection of features, including low gate capacitance, low gate-drain capacitance, and a high breakdown voltage. The breakdown voltage of the MMIX1F160N30T is up to 160 V, making it ideal for high power applications.
MMIX1F160N30T transistors are used for a variety of purposes, including DC/DC power regulation, motor control, and switching power supplies. It is used in many modern electronic products, including mobile phones, tablets, and other electronic devices. It\'s also commonly found in power many home appliances and commercial electronics.
The MMIX1F160N30T is a unipolar device, meaning that it only uses voltage as a control signal. This makes it very easy to use and allows for fast switching times. It also has low input impedance, which allows it to be used in high frequency applications. It also has low power consumption, making it more energy efficient than other types of transistors.
The MMIX1F160N30T is a versatile device that can be used in a variety of applications. It has a wide frequency range, low power consumption, and fast switching times. It is also very reliable and has a long life expectancy. It is an ideal choice for use in high power electronics, such as motor control, power regulation, and switching power supplies.
In conclusion, the MMIX1F160N30T is a high voltage MOSFET that can be used in a variety of high power applications. It has low gate capacitance, a high breakdown voltage, and low power consumption. It is also easy to use and has a long life expectancy. It is an ideal choice for use in high power electronics and is commonly found in home appliances and commercial electronics.
The specific data is subject to PDF, and the above content is for reference
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