MMIX1F160N30T Allicdata Electronics
Allicdata Part #:

MMIX1F160N30T-ND

Manufacturer Part#:

MMIX1F160N30T

Price: $ 25.85
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 102A SMPD
More Detail: N-Channel 300V 102A (Tc) 570W (Tc) Surface Mount 2...
DataSheet: MMIX1F160N30T datasheetMMIX1F160N30T Datasheet/PDF
Quantity: 1000
20 +: $ 23.49580
Stock 1000Can Ship Immediately
$ 25.85
Specifications
Series: GigaMOS™, HiperFET™, TrenchT2™
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 335nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
FET Feature: --
Power Dissipation (Max): 570W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 24-SMPD
Package / Case: 24-PowerSMD, 21 Leads
Description

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MMIX1F160N30T, also known as a high power MOSFET, is a high voltage insulated gate field-effect transistor. It\'s a type of transistor that uses an electric gate to control the conductivity of a semiconductor material. It\'s the most commonly used type of field-effect transistor in modern electronics.

A MMIX1F160N30T is a n-type enhancement mode MOSFET, meaning that the transistor turns on when there is an electric field in the gate. It has a large collection of features, including low gate capacitance, low gate-drain capacitance, and a high breakdown voltage. The breakdown voltage of the MMIX1F160N30T is up to 160 V, making it ideal for high power applications.

MMIX1F160N30T transistors are used for a variety of purposes, including DC/DC power regulation, motor control, and switching power supplies. It is used in many modern electronic products, including mobile phones, tablets, and other electronic devices. It\'s also commonly found in power many home appliances and commercial electronics.

The MMIX1F160N30T is a unipolar device, meaning that it only uses voltage as a control signal. This makes it very easy to use and allows for fast switching times. It also has low input impedance, which allows it to be used in high frequency applications. It also has low power consumption, making it more energy efficient than other types of transistors.

The MMIX1F160N30T is a versatile device that can be used in a variety of applications. It has a wide frequency range, low power consumption, and fast switching times. It is also very reliable and has a long life expectancy. It is an ideal choice for use in high power electronics, such as motor control, power regulation, and switching power supplies.

In conclusion, the MMIX1F160N30T is a high voltage MOSFET that can be used in a variety of high power applications. It has low gate capacitance, a high breakdown voltage, and low power consumption. It is also easy to use and has a long life expectancy. It is an ideal choice for use in high power electronics and is commonly found in home appliances and commercial electronics.

The specific data is subject to PDF, and the above content is for reference

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