MMIX1X200N60B3H1 Discrete Semiconductor Products |
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Allicdata Part #: | MMIX1X200N60B3H1-ND |
Manufacturer Part#: |
MMIX1X200N60B3H1 |
Price: | $ 26.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 600V 175A 520W SMPD |
More Detail: | IGBT 600V 175A 520W Surface Mount 24-SMPD |
DataSheet: | MMIX1X200N60B3H1 Datasheet/PDF |
Quantity: | 71 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 23.98410 |
10 +: | $ 22.18730 |
25 +: | $ 20.38810 |
100 +: | $ 18.94890 |
Current - Collector Pulsed (Icm): | 1000A |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 100A |
Power - Max: | 520W |
Switching Energy: | 2.85mJ (on), 2.9mJ (off) |
Input Type: | Standard |
Gate Charge: | 315nC |
Td (on/off) @ 25°C: | 48ns/160ns |
Test Condition: | 360V, 100A, 1 Ohm, 15V |
Reverse Recovery Time (trr): | 100ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 24-PowerSMD, 21 Leads |
Supplier Device Package: | 24-SMPD |
Base Part Number: | IXG*200N60 |
Series: | GenX3™, XPT™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 175A |
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MMIX1X200N60B3H1 is a single insulated-gate bipolar transistor (IGBT), more commonly referred to as a single IGBT. It is part of STMicroelectronics’ U-series IGBT range, featuring a high current rating and a fast switching speed.
The MMIX1X200N60B3H1 comes in a housing with a TAB mounting footprint, featuring single IGBT and diode chips with an Exposed Center Tab coupling. The IGBT is rated at 200A and 60V, with an isolation voltage rating of 1000V.
The MMIX1X200N60B3H1 IGBT can be used in a wide range of applications, including Automotive and Industrial Markets. It is suitable for use in applications where high-power switching must be quickly and accurately controlled. Common applications include motor control and switching power supplies.
The MMIX1X200N60B3H1 works by using two power switches, electrical isolation, thermal performance and zero loss switching. The dual-gate IGBT chip is driven by two separate gate drivers, one connected to each of the drains. The gate drivers are isolated from the power switching elements of the device via a high-voltage isolation structure. This ensures that the power switch can be controlled efficiently and safely.
The IGBT chip has a copper baseplate to provide excellent thermal performance and high-frequency switching. The chip is mounted onto the Exposed Center Tab that is connected to the dual-gate input terminals. This ensures efficient heat transfer from the chip to the baseplate and dissipates the heat to the surrounding environment.
The MMIX1X200N60B3H1 IGBT can be used in both low and high current applications. The device is designed to switch quickly and accurately, with zero losses. The device is structured to operate within the rated temperature range of -40°C to +125°C, and can be operated at frequencies up to 100kHz.
The MMIX1X200N60B3H1 IGBT is a reliable, cost-effective solution for motor control and switching power supplies applications. Its high current rating, low losses and fast switching speeds make it an excellent choice for a variety of power switching applications. With its temperature operational range and excellent heat dissipation, the device is also suitable for a variety of automotive and industrial markets.
The specific data is subject to PDF, and the above content is for reference
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