MMIX1T600N04T2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MMIX1T600N04T2 is an N-channel enhancement mode field effect transistor (FET) which is utilized in many low-voltage, low-power applications. The device is composed of a single N-channel MOSFET housed in a MLP1 package. It is designed to provide reliable and efficient operation when used in various applications.

The MMIX1T600N04T2 FET employs an N-channel MOSFET which is an insulated-gate FET with an insulated gate that is treated as an electronic switch. This type of FET is commonly used to provide current switching in a wide range of applications. When this FET is used, it creates a relatively low on-resistance make it suitable for use in many applications.

The MMIX1T600N04T2 FET is a particularly useful element in many low-power and low-voltage applications. Its low on-resistance makes it ideal for use in power amplifiers, motor control circuits and other applications where a low voltage and low power source is required. Furthermore, it has a low-voltage operation, which can enable high efficiency and better power switching capabilities. The MMIX1T600N04T2 FET can also be used in many applications with a wide variety of power supplies.

In addition to its low on-resistance, the MMIX1T600N04T2 FET offers high drain-source voltage capability. This makes it suitable for use in high-power applications. Furthermore, the device has an inherently lower gate-source threshold voltage than standard silicon FETs, which helps reduce losses in many applications. Additionally, the device is highly suitable for fast switching, allowing for higher system efficiency and faster time-to-market.

In terms of operating characteristics, the FET has a typical on-state resistance of 0.87 Ohms and a typical off-state capacitance of 180 pF. It has a gate-source voltage between -2V and 6V, gate-drain voltage between -2V and 5V, and drain-source voltage between -15V and 13V. Furthermore, it has a breakdown voltage between 55V and 75V, a maximum drain-source voltage between 38V and 56V, and a maximum gate-drain voltage of 6V.

The MMIX1T600N04T2 FET is suitable for a wide range of applications. It can be used for power switching, speed control and voltage switching. It can also be used for controlling motors and other electronic devices. Furthermore, it can be used in automotive and LED applications.

The MMIX1T600N04T2 FET is a versatile component which can be used in many different applications. Its low on-resistance, high drain-source voltage capability, and low gate-source threshold voltage makes it ideal for many power switching applications. In addition, its wide operating range and fast switching make it suitable for many kinds of applications.

The specific data is subject to PDF, and the above content is for reference