MPS6652RLRAG Allicdata Electronics
Allicdata Part #:

MPS6652RLRAG-ND

Manufacturer Part#:

MPS6652RLRAG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 40V 1A TO-92
More Detail: Bipolar (BJT) Transistor PNP 40V 1A 100MHz 625mW T...
DataSheet: MPS6652RLRAG datasheetMPS6652RLRAG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Power - Max: 625mW
Frequency - Transition: 100MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: MPS6652
Description

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The MPS6652RLRAG Transistor is a bipolar junction transistor commonly used in radio frequency applications, audio amplifiers, and converters. It has a gain of up to 40 at a collector-emitter voltage of 4V. It is designed for use in wide temperature range applications and is highly reliable. The MPS6652RLRAG has a minimum breakdown voltage of 500V.

The MPS6652RLRAG functions as an amplifier or switch in electronic circuits and is used in a wide range of operations. In general, transistors are small currents that can control large, varying currents in a circuit. The MPS6652RLRAG is a bipolar junction transistor, which means that it has two layers of semiconductor material, p-type and n-type. Each layer contains an electrical polarity. The two layers are placed side by side and connected by two electrodes, or leads, called the base and the collector. When a voltage is applied to the base, it causes a flow of current through the collector and emitter.

The working principle of a transistor involves a junction between the collector and emitter sides of the device, called a base-collector junction. A current controlled by a small base current, typically a few milliamps, is able to switch the state of the output current. The status of the output current is determined by the type of transistor. NPN transistors normally have an open drain while PNP transistors normally have an open source.

The MPS6652RLRAG features a low input capacitance and high frequency gain, making it well suited for signal amplification and switching applications. It is also a fast-switching transistor, with a typical rise time of 0.2us. Its low power consumption is desirable for battery-operated devices, and its wide operating temperature range makes it suitable for industrial applications.

In addition to its many electronic functions, the MPS6652RLRAG is also highly resistant to electrostatic discharge (ESD). This makes it valuable in applications where it must be protected from static electricity generated by the environment. It also features low thermal resistance, allowing more heat to be transferred from the device to the environment without affecting the performance of the device.

The MPS6652RLRAG is a versatile device suitable for a wide range of applications. It has low power consumption, high frequency gain, and fast switching time, making it ideal for signal amplification and switching applications. Its wide operating temperature range and ESD protection provides electrical protection for the device. It can also be used in audio amplifiers, converters, and other radio frequency operations.

The specific data is subject to PDF, and the above content is for reference

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