MPSH10_D26Z

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The MPSH10_D26Z is a high-power transistor designed for various radio-frequency (RF), microwave, radar, satellite communication and consumer electronics applications. It is a type of bipolar junction transistor (BJT), specifically a NPN-type high-frequency, high-frequency power transistor (FET) with a maximum power rating of 250 mW at 1.2 GHz and a maximum collector current of 200 mA. This device has a wide frequency range of up to 14 GHz, making it ideal for a range of radio-frequency and microwave applications such as base stations, point-to-point communication links, switch amplifiers and wideband amplifiers.

The MPSH10_D26Z is an excellent choice for RF and microwave applications as it is highly linear, has a high frequency response and a high-parametric stability. The device is designed to operate over a wide temperature range and can function in both switching and amplifier circuits. Furthermore, its low cost, high integration, and low power consumption are advantages that make it suitable for many commercial applications.

The working principle of the MPSH10_D26Z is based on a common emitter topology. It utilises a standard bipolar transistor circuit with an emitter and a collector to produce current gain and voltage gain. In this arrangement, the collector current is controlled by the base current, and the voltage gain is determined by the ratio of the collector resistance and the emitter resistance. The three terminals – the base, the collector, and the emitter– are in a common junction, allowing current to flow between them.

The MPSH10_D26Z operates as an amplifier or a switch in different applications. As an amplifier, the device amplifies signals in terms of frequency and voltage. As a switch, it can open and close a circuit. The MPSH10_D26Z can also be used as a radio frequency power amplifier, as it supports wideband operation and can achieve a maximum output power of 250 mW at 1.2 GHz. Additionally, the device can be used in wideband amplifiers and RF power amplifiers, as it has an excellent linearity and high frequency response. Moreover, the device can function in high speed switching circuits, providing highly reliable performance.

In conclusion, the MPSH10_D26Z is a high-power transistor designed for a range of radio-frequency and microwave applications. It has a wide frequency range of up to 14 GHz, a maximum power rating of 250 mW at 1.2 GHz, and a maximum collector current of 200 mA. It is an NPN-type high-frequency power transistor and operates on a standard bipolar transistor circuit. Its low cost, high integration, and low power consumption make it suitable for many commercial applications, and can be used as an amplifier or a switch. The MPSH10_D26Z is also suitable for use in wideband amplifiers and RF power amplifiers, and high speed switching circuits.

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