Allicdata Part #: | MPSH81_D27Z-ND |
Manufacturer Part#: |
MPSH81_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS RF PNP 20V 50MA TO-92 |
More Detail: | RF Transistor PNP 20V 50mA 600MHz 350mW Through Ho... |
DataSheet: | MPSH81_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 600MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSH81 |
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The MPSH81_D27Z is a bipolar junction transistor, or BJT, that has been specially designed for use as an amplifier in high frequency, radio frequency (RF) applications. This type of transistor is used to amplify or modulate an RF signal, and is an essential component in the design and operation of all types of RF communication systems. The device is manufactured by Panasonic Semiconductor Solutions and can be found in a variety of packages and configurations.
The MPSH81_D27Z is a NPN-type device that operates on 1V to 10V of collector current. It features good dc stability, low noise figures, and excellent dynamic response rates. It also features a maximum operating frequency of up to 200MHz and a switching time of up to 15ns. These capabilities make the MPSH81_D27Z ideal for use in a variety of RF applications, such as television receivers, walkie talkies, and cell phones.
The MPSH81_D27Z is a three-dimensional transistor (3DT). This means that it is composed of two or more layers of crystalline silicon, with the top layer providing the active layer for bipolar transistors and the bottom layer providing the base or floor for the transistor. This type of construction provides improved performance in RF applications, with reduced electrical noise, improved thermal stability, and lower operating power consumption than traditional BJTs.
The working principle of the MPSH81_D27Z is the same as any other BJT. A small current, typically around 10 to 20 milliamps, is passed through the base of the transistor, which is then amplified and outputted on the collector side. This current can then be used to modulate the RF signal so that the received signal is amplified to the desired level. Additionally, the transistor can also be used as an oscillator or switch, depending on the configuration.
The MPSH81_D27Z is a versatile device that can be used in a variety of high frequency applications. It is a compact device that can be integrated into almost any system design and provides excellent performance in a variety of RF applications. The device is also cost effective, making it a popular choice for many RF applications. Some typical applications include television receivers, cordless phones, and other communication systems.
The specific data is subject to PDF, and the above content is for reference
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