Allicdata Part #: | MPSH17_D26Z-ND |
Manufacturer Part#: |
MPSH17_D26Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 15V TO-92 |
More Detail: | RF Transistor NPN 15V 800MHz 350mW Through Hole T... |
DataSheet: | MPSH17_D26Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 800MHz |
Noise Figure (dB Typ @ f): | 6dB @ 200MHz |
Gain: | 24dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 5mA, 10V |
Current - Collector (Ic) (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSH17 |
Description
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MPSH17_D26Z Application Field and Working Principle
The MPSH17_D26Z is part of a group of transistors called bipolar junction transistors (BJTs). It is designed as a radio frequency (RF) transistor and is mainly used for amplifying/mixing signals with operations in the 100MHz to 1000MHz frequency range. This device can be used in many different applications, including wireless communication, general-purpose amplifiers and hook resonators – among other things.The MPSH17_D26Z is comprised of two layers of semiconductor material separated by a thin layer of an “insulator.” This arrangement forms a “junction” between the two layers that acts as a one-way switch for electric current. The transistor works based on an input signal (base voltage) that causes a change in the current level flowing through the device. This change in current is what causes the amplified output to be produced by the transistor. A good example is an RF amplifier circuit in which the MPSH17_D26Z acts as the amplifier. In this type of circuit, the source (input) feeds a small current into the transistor’s base voltage. This input current causes a change in the current level in the transistor’s collector-emitter structure. This change is what causes the amplified output to be created. The MPSH17_D26Z is characterized by high gain, low noise, excellent linearity and good dynamic performance. It is also able to operate over a wide range of frequencies, making it a great choice for use in a range of applications, such as reference designs, amplifiers and test equipment. One of the main advantages of the MPSH17_D26Z is its low distortion performance. This is due to the device’s low noise performance, which makes it an ideal choice for use in designs that require high linearity and dynamic performance. The device is also capable of operating over a large range of frequencies, making it suitable for applications that require a wide range of amplifying operations. In addition, the MPSH17_D26Z has a good power handling capability, allowing it to handle more power when compared to other transistors. This makes it an ideal choice for applications that require high power handling capabilities.Overall, the MPSH17_D26Z is an excellent choice for a variety of applications, thanks to its high gain, low noise overall performance, great linearity and wide frequency range. With its capabilities and features, the MPSH17_D26Z is a great choice for various designs and applications.The specific data is subject to PDF, and the above content is for reference
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