Allicdata Part #: | MPSH10RLRAGOS-ND |
Manufacturer Part#: |
MPSH10RLRAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN VHF/UHF SS 25V TO92 |
More Detail: | RF Transistor NPN 25V 650MHz 350mW Through Hole T... |
DataSheet: | MPSH10RLRAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 650MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSH10 |
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The MPSH10RLRAG (also known as 10RLRAG) is a type of RF bipolar transistor. It is most commonly used in radio frequency (RF) circuit designs and applications. It is a great choice for narrowband amplifying and switching.
The MPSH10RLRAG is a bipolar NPN transistor, meaning it has three PINs (i.e., a collector, a base, and an emitter). It is designed for use in high frequency applications and provides high power gain at the same time. The MPSH10RLRAG is a low noise, high gain, and high power device. These qualities make it a great choice for radio frequency amplifying, signal switching, and other radio frequency applications.
The MPSH10RLRAG transistor is constructed from gallium aluminum arsenide (GaAs) and has a maximum frequency of operation of about 1500 MHz. It has a wide range of operating voltages (2-25 Volts) and is also temperature stable across a range of operating temperatures (–40 degrees to 105 degrees Celsius).
When it comes to the working principle of the MPSH10RLRAG transistor, it works by using carrier injection to control the current flow between its collector and emitter. The base voltage acts as a control signal to determine the amount of current flowing between the collector and emitter. When the base voltage is low, there is little or no current flowing, while when it is high, a higher current will flow. This is the process known as biasing.
When it comes to application fields, the MPSH10RLRAG transistor can be used in a wide variety of radio frequency (RF) circuit designs, including amplifiers, signal switching, signal conditioning, signal processing, radiation resistant designs, and more. It can also be used in high frequency radio services, such as mobile radio and wireless communication. This device can be used in many high power applications at high frequencies, as it is designed for applications such as ultra-wideband amplifiers, transmitters and receivers, and other high frequency applications.
In conclusion, the MPSH10RLRAG is a great choice for radio frequency applications and circuit designs. It has a wide range of operating voltages, is temperature stable across a range of temperatures, and provides high power gain. It is also a low-noise device, which makes it great for signal processing and signal conditioning. Moreover, the MPSH10RLRAG is ideal for narrowband applications, such as amplifying and switching, and has many high power applications at high frequencies, including ultra-wideband amplifiers and transmitters and receivers.
The specific data is subject to PDF, and the above content is for reference
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