Allicdata Part #: | MPSH17GOS-ND |
Manufacturer Part#: |
MPSH17G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN RF SS 15V TO92 |
More Detail: | RF Transistor NPN 15V 800MHz 350mW Through Hole T... |
DataSheet: | MPSH17G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 800MHz |
Noise Figure (dB Typ @ f): | 6dB @ 200MHz |
Gain: | 24dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 5mA, 10V |
Current - Collector (Ic) (Max): | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSH17 |
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MPSH17G transistors are specially designed as RF transistor as a voltage-controlled device that is capable of amplifying or attenuating current or source signal while operating at microwave frequencies. This type of transistor, at an operating voltage of 17V, ensures high-speed switching between the on and off states, resulting in a very high switching frequency. This is an important characteristic, as it results in very low levels of power dissipation, meaning lower power consumption. Furthermore, the MPSH17G has very good linearity, enabling it to be used in power amplifiers, receivers, etc.
In order to understand the other beneficial characteristics of this particular transistor, it is important to understand the working principle behind it. The MPSH17G has a bipolar junction field effect (BJFET), which is a type of transistor that consists of a junction field effect and a gate. These two components have different functions, the field effect causes the changes in current between the two terminals, the base and the drain, depend on the voltage applied to the gate by changing the width of the channel connecting the two terminals.
The gate of the MPSH17G transistor is responsible for controlling current flow, with the voltage applied to it allowing the transistor to operate in its on or off state. The gate bias is usually set using either a fixed voltage source (for DC signals) or a small AC voltage (for radio frequency operation). In DC operation, the gate bias voltage is applied at both the source and the drain and the MPSH17G operates as a switch. In RF operation, the gate bias is applied to the source only, thus enabling the gate to modulate the current flowing through the transistor.
To summarise, the MPSH17G is an ideal choice for radio frequency operation. It provides fast switching, low levels of power dissipation, good linearity and a low number of components required. In addition, it has good characteristics associated with high-frequency application, such as a low noise figure due to low on-resistance, excellent stability and modulation capabilities. This makes it suitable for a wide range of applications, including power amplifiers, transmitters and receivers, microwave ovens and other consumer applications.
The specific data is subject to PDF, and the above content is for reference
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