MPSH24_D26Z

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	30V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 8mA, 10V
Power - Max:	625mW
Frequency - Transition:	400MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3

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Introduction

The term MPSH24_D26Z refers to a particular family of bipolar junction transistors (BJT). The base of this type of transistor is a semiconductor material, typically silicon, which is then treated to create an n-type layer and a p-type layer. The n-type layer draws current from the base, while the p-type layer delivers current to the base. This device is a single transistor, meaning it has only two base terminals, referred to as the collector and emitter.

Application Field

The MPSH24_D26Z can be used in a variety of applications, such as amplifiers, switches, and rectifiers. This type of transistor is ideal for applications where low power, high frequency input signals and low noise are critical. For example, it can be used in electronic circuits that sense door positions, and in electronic flash units, which require high speed triggering.

Advantages

The MPSH24_D26Z can offer several advantages over other types of bipolar junction transistors. These include a higher current gain and a higher breakdown voltage compared to BJTs made from other materials. Furthermore, this device is fast-acting, meaning it can recover from transient overloads quickly. Additionally, it offers low-power operation and requires less heat dissipation compared to other devices in its class.

Working Principle

The MPSH24_D26Z works on the principle of a bipolar junction transistor. As current flows from the collector to the base, it leaves the base and enters the emitter. This current then enters the p-type layer, stimulating electrons which are present in the semiconductor material. These electrons move to the n-type layer, where they recombine with holes to produce current.This process is reversed when voltage is applied to the emitter. The electrons in the n-type layer are pulled back to the emitter, allowing current to flow through the emitter and enter the base. This process allows the transistor to amplify or switch current, by controlling the current flow through the collector and base.

Conclusion

The MPSH24_D26Z is a single transistor capable of rapidly switching or amplifying current from a low power input. It is ideal for applications requiring high frequency, low noise operation and can offer several advantages over other types of bipolar junction transistors. As this device is fast-acting, it can handle transient overloads with ease and can provide reliable operation without the need for excessive heat dissipation.

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