Allicdata Part #: | MPSH11-ND |
Manufacturer Part#: |
MPSH11 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN TO-92 |
More Detail: | RF Transistor NPN 25V 50mA 650MHz 350mW Through Ho... |
DataSheet: | MPSH11 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 650MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 4mA, 10V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The MPSH11 is a type of bipolar junction transistor (BJT) which specializes in radio frequency (RF) usage. A BJT is a type of transistor that can be used to control voltages and currents in electronic circuits. In the MPSH11, the base, emitter and collector electrodes are all commonly used as control, input and output connectors. Its two main characteristics are the ability to consume very little current while still operating at high frequencies and the ability to pass large amounts of current without getting easily saturated.
This specific BJT was developed to be used as RF amplifiers in large electronic systems such as aircraft avionics, automotive electronic systems and communications systems. The MPSH11 has very low quiescent current and current gain characteristics at radio frequencies, as well as low noise and low distortion figures. It has extremely wide linear dynamic range providing excellent amplification capabilities at both high and low frequencies.
A BJT typically works by the application of an input signal to the base of the transistor. As the base voltage changes the current flow from collector to emitter changes in the same raised way. With the MPSH11 this characteristic is further augmented to provide high performance for radio frequency signals. At the radio frequency signals the current flow between the collector and emitter is rearranged slightly to provide higher current flow with very little quiescent current.
In our electronic system with high frequencies the MPSH11 can be used between the RF source, such as an antenna, and the baseband circuitry of the system. The transistor can be used to amplify the incoming signals while limiting the amount of noise and distortion present in the signals. Further, MPSH11 transistors can be used as switches, providing an ability to control the flow of power between components within the system.
Because of the MPSH11\'s small size, it is also a popular choice for systems where space is at a premium, such as laptops or cell phones. The transistor is capable of operating for extended periods at temperatures up to 125°C, making it suitable for use in harsh environments as well. Finally, it is cost effective and widely available.
In summary, the MPSH11 is a bipolar junction transistor developed to provide high performance in radio frequency applications. It has very low currents at radio frequencies, providing excellent amplification capabilities. The transistor is small and cost effective and its wide linear dynamic range makes it suitable for use in a number of applications. It is commonly used as an amplifier and switch in electronic systems, and its excellent temperature capabilities also make it suitable for use in
The specific data is subject to PDF, and the above content is for reference
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