MPSH10G

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The MPSH10G is a bipolar transistor used in the radio frequency (RF) power amplifiers. It is a low noise, high gain, high breakdown voltage, and very low distortion device making it suitable for use in all cellular applications. Specifically, it is commonly used in the frequency range from 800 MHz to 1.5 GHz.

The MPSH10G is a single-stage, NPN, enhancement-mode, lateral Diffused Metal Oxide Semiconductor (DMOS) transistor, designed for a wide range of applications including FM, AM and transmitter pre-amplifier stages, high power oscillators and wideband amplifiers.

The MPSH10G has a built-in emitter degeneration, self-isolation and very low-noise characteristics. The device has a power gain up to 12.5 dB ( 1.5W at 900MHz). It also has high linearity gain, good breakdown voltage and safe operation area.

The MPSH10G operates from a single power supply, and can handle a wide range of input power levels. The device can be used in single-ended, push-pull and bridge configurations. In push-pull and bridge configurations, the device can be used for power amplification and linear power applications. The device can be used in a wide range of applications, including for FM, AM, TV and transmitters pre-amplifier stages and for power oscillators.

The working principle of the MPSH10G device is based on the bipolar field effect transistor. A bias voltage is applied to the base-emitter junction, which determines the saturation current. The saturation current is the current flowing through the collector of the transistor, and is a measure of the gain of the device. The device then works to amplify the voltage applied across the base-collector junction, resulting in a power gain.

The MPSH10G also features a variety of features and characteristics to optimize the performance of the RF amplifier. The device features a wide range of input and output levels, as well high-immunity to third-order non-linear distortion and suppressed RF noise. The transistor also has good current-gain linearity, making it suitable for amplifying low distortion signals.

The MPSH10G also has a low-standing noise figure, good input/output impedance match for wider bandwidths, low power consumption and heat-sinking capabilities. The device also has emission immunity from other transistors operating at the same frequency.

In summary, the MPSH10G is a high-performance, low-noise and high-gain device, offering superior performance in the field of RF amplifier applications. Its features and characteristics make it suitable for use in a wide range of applications, including FM, AM, TV and pre-amplifier stages and high power RF amplifiers.

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