Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	25V
Frequency - Transition:	650MHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 4mA, 10V
Current - Collector (Ic) (Max):	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	MPSH10

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MPSH10RLRA Application Field and Working Principle

Introduction

MPSH10RLRA is a bipolar (BJT) NPN planar silicon RF transistor produced by STMicroelectronics. It has high power gain at low current consumption, as well as excellent linearity, noise characteristics, and tolerance to reverse surges. It is also produced as a lead-free part. The transistor\'s materials and structure are designed to minimize parasitic capacitances, allowing it to operate at higher frequencies with increased power efficiency.

Application Fields of MPSH10RLRA

MPSH10RLRA is suitable for a range of RF applications, and can be used in transmitters and receivers, base stations, and satellite communication links. It is suitable for medium power linear and switching applications, where high power gain and a low current consumption are important factors.Its lead-free version is suitable for use in high-performance, high-voltage application fields, such as RF amplifiers, HF driver stages, and RF power switches.

MPSH10RLRA Working Principle

The MPSH10RLRA is a bipolar transistor, meaning that it is constructed of three layers of semiconductor material. The layers are separated by a thin layer of insulating material and are connected to three metal contacts. Two of the contacts are called the collector and the base, and the third is called the emitter. The transistor consists of two P-type and one N-type doped regions.The base and collector regions are connected to the emitter by a thin layer of insulating material. This layer is called the base-collector junction. When a small current is applied to the base, the base-collector junction becomes forward-biased, and a much larger current can then flow from the collector to the emitter. This current flow from the collector to the emitter is what allows the transistor to amplify or decrease the current. When the base of the transistor is supplied with a negative voltage, the transistor is said to be cut off and no current can flow. This is why the power rating of a transistor is usually given at a certain collector current. The MPSH10RLRA transistor also has a high voltage rating and can handle voltages up to 1V. This high voltage rating allows it to be used in applications where a high voltage applied to the collector will cause the collector current to vary exponentially.

Conclusion

The MPSH10RLRA is a high power gain and low current consumption bipolar (BJT) NPN planar silicon RF transistor. It is suitable for many RF applications and can be used in transmitters and receivers, base stations, and satellite communication links. Its lead-free version is suitable for high-performance, high-voltage applications. Its working principle is that a small base current causes a larger current from the collector to the emitter, allowing the transistor to amplify or decrease the current. It also has a high voltage rating and can handle voltages up to 1V.

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