Allicdata Part #: | MPSH34_D75Z-ND |
Manufacturer Part#: |
MPSH34_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.05A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 50mA 500MHz 625mW... |
DataSheet: | MPSH34_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 7mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 20mA, 2V |
Power - Max: | 625mW |
Frequency - Transition: | 500MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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Transistors are electronic devices used to control currents and voltages. Transistors are classified according to their type, construction, switching ability and operating characteristics. The MPSH34_D75Z is a single bipolar junction transistor (BJT). It is designed to provide superior performance in switching and digital applications, and is suitable for devices such as audio amplifiers, instrumentation, and for high frequency and radio frequency (RF) applications.
This type of BJT provides a low-frequency gain of 110 and a high-frequency gain of 20, while feature a power rating rating of 350mW.
The MPSH34_D75Z has a low cutoff frequency of 0.1GHz, a low saturation voltage of 200mV and a low saturation current of 7µA. Its breakdown voltage is as high as 800V and its maximum current gain is 250.
The MPSH34_D75Z is suitable for any application requiring on-off switching of currents or voltages. It can be used in digital applications such as computers, digital signal processors (DSPs), FPGAs, microcontrollers and digital cameras. It is also suitable for use in instrumentation and other analog circuits. In addition, this device is ideal for frequency switching operations, such as AM/FM radio, mobile phones and other communications equipment.
The working principle of a bipolar junction transistor is based on the transfer of charge carriers between two levels of dopant. This connection is known as a ‘base-emitter’ junction. The current flows through the base-emitter junction which causes the base to become negatively charged with respect to the emitter. Thus, when a small current is applied to the base of the transistor, a larger current will flow from the emitter to the collector. At the same time, a voltage drop across the base-collector junction will occur. The resulting current gain is known as the ‘hfe’ of the transistor. This type of transistor produces a weak voltage amplifier.
In addition to its on-off operation, the MPSH34_D75Z can also be used in voltage switching operations. In this type of operation, it acts as a switch whose output state is determined by the input logic signal. This type of transistor is also able to work with a wide range of input signal levels, making it ideal for use in mixed signal circuits. The MPSH34_D75Z is also capable of providing both digital as well as analog performance.
The MPSH34_D75Z is a popular choice for many digital and analog applications. Its high current and voltage ratings make it an ideal choice for a wide range of applications requiring low-frequency gains and high-frequency gains. Its low saturation voltage and low saturation current make it suitable for use in low voltage and current applications. Its robust design and high power rating make it ideal for applications requiring both on-off switching and voltage switching.
The specific data is subject to PDF, and the above content is for reference
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