MPSH17

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The MPSH17 is a medium power, high frequency, NPN silicon bipolar junction transistor (BJT) typically used in radio frequency (RF) applications. The device is known for its reliability, wide operating frequency range, and low noise.

MPSH17 is a versatile and easy to use device with a wide range of applications from HF to UHF due to its high break down voltage, low noise, high gain, and high current capability. It is an ideal device for use in power amplifiers, oscillators, and large-scale integration (LSI) circuits.

The MPSH17 has two principle components, a collector, and an emitter, separated by a base region. A voltage applied to the base region of the device controls the flow of current between the collector and the emitter. The transistor is typically used in the common base configuration, which is the most stable and has the highest power gain. The common base configuration requires that the collector current be greater than the base current in order to properly bias the transistor.

When used in a power amplifier, the MPSH17 exhibits excellent gain and power efficiency. The higher the operating frequency, the greater the gain. The transistor is generally used in wideband applications and able to operate with frequency bands up to UHF using a single transistor. The wide operational band is made possible by the use of the distributed collector design, which helps to minimize the parasitics associated with other bipolar transistors.

The low noise performance of the MPSH17 is one of its distinguishing features. The transistor can operate with a lower noise figure than other radio frequency transistors, and this makes it an ideal choice for use in low noise applications. The low noise and wide operating frequency range make the device an ideal match for applications such as receivers, synthesizers, and transceivers.

The collector and emitter parameters of the MPSH17 are also optimized for high frequency applications. The low collector-emitter saturation voltage helps to reduce power dissipation, while the high collector current helps to maximize the amplifier\'s power output. The efficient collector design, along with the high frequency application, helps to minimize losses, resulting in increased gain and power efficiency.

Despite its high frequency applications, the MPSH17 offers excellent temperature stability. The device is able to operate across a wide temperature range, from -40°C to 125°C, without significant degradation in performance. This makes the device an ideal choice for use in a wide range of environments and in applications that require ruggedness and reliability.

In summary, the MPSH17 is a medium power, high frequency, NPN silicon bipolar junction transistor (BJT) typically used in radio frequency (RF) applications. Importantly, it has a wide operating frequency, low noise, high current capability, and temperature stability. This makes it an ideal device for use in power amplifiers, oscillators, and large-scale integration (LSI) circuits.

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