Allicdata Part #: | MPSH17_D75Z-ND |
Manufacturer Part#: |
MPSH17_D75Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 15V TO-92 |
More Detail: | RF Transistor NPN 15V 800MHz 350mW Through Hole T... |
DataSheet: | MPSH17_D75Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 800MHz |
Noise Figure (dB Typ @ f): | 6dB @ 200MHz |
Gain: | 24dB |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 5mA, 10V |
Current - Collector (Ic) (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | MPSH17 |
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Transistors are electronic components that are widely used for amplifying, switching, and other applications. The MPSH17_D75Z is a working transistor that belongs to the RF bipolar junction transistor (BJT) family. This device combines the advantages of low noise and broadband operation. In this article, we will discuss the application field and working principle of the MPSH17_D75Z.
The MPSH17_D75Z transistor can be used in numerous industrial applications. It can be used in a variety of radio frequency (RF) and wireless systems. It is suitable for use in RF amplifiers, local oscillators, voltage-controlled oscillators, tunable filters, and linear active power amplifiers. Additionally, it can be used in RF power amplifiers for base stations, repeaters, and other communication systems. The MPSH17_D75Z is also suitable for use in other applications including motion sensing systems and pulse width modulation.
The working principle of the MPSH17_D75Z transistor is based on the principle of bipolar junction transistors. It consists of three different layers of semiconductor material - the emitter, the base, and the collector. The collector and the emitter are made of low-level doped N-type semiconductor material and the base is made of high-level doped P-type semiconductor material. These materials form two PN junctions - the emitter-base junction and the collector-base junction. The electrons flow from the emitter to the collector and the holes flow from the collector to the emitter.
The way these junctions work is very simple. When an electric field is applied, the electrons and holes in the PN junctions are accelerated and they start to cross the junction. The current flow can be controlled by varying the bias voltage applied to the base-emitter junction. As the bias voltage changes, the number of electrons and holes crossing the junction also changes. This in turn changes the total current flowing through the device. Thus, the transistor acts as an amplifier or switch depending upon the input signals applied to it.
The main advantages of the MPSH17_D75Z transistor are low noise and broadband operation. This allows the device to be used in extremely high frequency (EHF) and millimeter wave applications. It operates at frequencies up to 225 GHz and can handle power levels of up to 140 W. Additionally, due to its low noise figure and high linearity, it is suitable for applications requiring wide bandwidths.
To conclude, the MPSH17_D75Z transistor is a working device that belongs to the RF bipolar junction transistor (BJT) family. It can be used in numerous industrial applications and it offers excellent performance, low noise, and broadband operation. The way it works is based on the principle of bipolar junction transistors. The device has a wide frequency range of up to 225 GHz and can handle power levels of up to 140 W.
The specific data is subject to PDF, and the above content is for reference
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