MPSH11_D27Z Allicdata Electronics
Allicdata Part #:

MPSH11_D27Z-ND

Manufacturer Part#:

MPSH11_D27Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS RF NPN 25V 50MA TO-92
More Detail: RF Transistor NPN 25V 50mA 650MHz 350mW Through Ho...
DataSheet: MPSH11_D27Z datasheetMPSH11_D27Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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MPSH11_D27Z transistors are bipolar junction transistors, or BJTs, specifically designed for use in high frequency radio frequency applications. These transistors are commonly used in amplifiers and oscillators. BJTs are a type of transistor where the base of the device is connected to the emitter. This connection is then modulated by input current to control the current flowing between the collector and the emitter. The MPSH11_D27Z transistor is a NPN device, which means that it is a type of BJT that has a negative charge at the base.

The MPSH11_D27Z transistor is a surface mount device, which makes it easy to incorporate into a printed circuit board. Its leads are designated with different letters, corresponding to their application. The base is abbreviated with the letter B, while the emitter is indicated with the letter E, and the collector is marked with the letter C. This type of transistor also has a high maximum voltage rating of 80 volts, and a collector-emitter saturation voltage of 0.21 volts when driving a 500mA current.

The MPSH11_D27Z transistor is capable of operating at a wide range of frequencies, with a frequency response ranging from 400 MHz to 4 GHz. Additionally, it is designed to handle high power levels without any problems. The maximum power dissipation of the device is 900 mW and it is capable of handling up to 8 watts of power.

The working principle of the MPSH11_D27Z transistor is based on the classic BJT design. When a small base current is applied across the device, the collector and emitter of the transistor become forward-biased. This allows a larger current to flow between the collector and emitter, reliable on the base current. This current can then be used to control a larger signal.

MPSH11_D27Z transistors are used in a variety of applications, including radio frequency amplifiers and oscillators, as well as frequency multipliers and generators. They are also used in a wide variety of consumer and industrial products, such as radios, media players, and cellular phones.

The MPSH11_D27Z transistor is an ideal choice for RF applications, due to its high frequency response and power handling capabilities. Additionally, it is easy to incorporate into a printed circuit board, due to its surface mount design. With its wide range of applications, the MPSH11_D27Z transistor is an excellent choice for a variety of high frequency radio frequency applications.

The specific data is subject to PDF, and the above content is for reference

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