| Allicdata Part #: | 1465-1137-ND |
| Manufacturer Part#: |
MRF10031 |
| Price: | $ 84.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | M/A-Com Technology Solutions |
| Short Description: | TRANS NPN 30W 960MHZ-1215MHZ |
| More Detail: | RF Transistor NPN 55V 3A 30W Chassis Mount 332A-0... |
| DataSheet: | MRF10031 Datasheet/PDF |
| Quantity: | 10 |
| 1 +: | $ 84.43890 |
| 10 +: | $ 81.90570 |
| 100 +: | $ 80.21700 |
| 1000 +: | $ 78.52820 |
| 10000 +: | $ 75.99500 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 55V |
| Frequency - Transition: | -- |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | 9.5dB |
| Power - Max: | 30W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 500mA, 5V |
| Current - Collector (Ic) (Max): | 3A |
| Operating Temperature: | 200°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | 332A-03 |
| Supplier Device Package: | 332A-03, Style 2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF10031 is a high-performance, broadband RF transistor. It is designed for linear and high-power gain applications that require a wide device impedence range along with significant output power capability. The MRF10031 offers typical power gains of over 20 dB, with a maximum output power of 12 watts.
The MRF10031 is a bipolar junction transistor (BJT) with a structure that incorporates multiple level emitters, has low total noise-figure and high linearity. It has been developed specifically for use in applications that require a wide dynamic frequency range and high power output with stationary or varying signals. It has been utilized for a wide variety of broadband communications applications, such as wireless fidelity (Wi-Fi) , Bluetooth, and Global System for Mobile Communications (GSM).
This device has a specific working principle. First, the RF signal is applied to the base and collector of the device. This signal is then amplified and driven by a number of levels of emitter structures, which increases both the voltage and current gains. Finally, the output signal is provided through the collector and the amplified signal is then output to the device’s output. This device also provides a low intermodulation distortion characteristic, which is beneficial in wireless communications.
In terms of application fields, the MRF10031 can be utilized for several different types of communications. It can be used for wireless local area networks (WLAN), ultra-wideband (UWB), Global Positioning System (GPS), and other wireless applications. Additionally, it can be used for RF signal acquisition and low-noise amplifier (LNA) applications. Additionally, its low noise figure and high linearity are ideal for satellite television, radio applications, and WiMax radio base station transmitters.
In conclusion, the MRF10031 is an ideal transistor for a wide variety of RF applications. It offers high linearity and a low noise figure, as well as a wide dynamic frequency range and high power output. It can be employed in a number of different areas, including wireless-local-area networks (WLANs), UWB, GPS, and mobile communications. It has also been used successfully in LNA and RF signal acquisition applications.
The specific data is subject to PDF, and the above content is for reference
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| MRF19090SR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.93GHZ NI-880... |
| MRF1570NT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 40V 470MHZ TO272-8... |
| MRF19045LR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.93GHZ NI-400... |
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MRF10031 Datasheet/PDF