MRF171A

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The MRF171A is a high-power N-Channel enhancementfield-effect transistor (FET) designed for radio frequency (RF) amplifier applications. It is well suited for use in linear amplifier and power amplification stages in the frequency band of 144 to 148 MHz and the power output of up to 150W, depending on the efficiency. The MRF171A features a wide frequency response from 1.9 to 200 MHz, with linearity being improved up to 500 MHz.

An FET (field-effect transistor) is an active semiconductor device consisting of three terminals that conduct electric current as a result of a charge buildup in an insulated gate. FETs are divided into two classes, one being the Junction FET (JFET), and the other being the Metal Oxide Semiconductor FET (MOSFET).

The MOSFET is the absolute form of FET and consists of two components: the source, which is the area where the electrons enter, and the drain, which is the area where the electrons leave. The central component of a MOSFET is the gate, where the gate voltage is applied. It is responsible to control the flow of electrons between the source and drain electrodes.

The MRF171A is a high-power N-channel Enhancement-Type MOSFET and is widely used in medium to high-power RF amplifier applications. The MRF171A is fabricated using the enhancement mode of MOSFET technology and contains internal ESD protection.

The working principle of the MRF171A MOSFET is quite simple, in that the gate voltage determines the channel resistance of the FET, as well as the voltage in the ON state. The drain-to-source voltage acts as the voltage for the transistor and the gate voltage determines the amount of current that can be sourced or sunk. Depending on the benefit desired, the drain-to-source voltage can be controlled by adjusting the gate voltage. The higher the gate voltage, the more current, and the higher the drain-to-source voltage. The application of an appropriate bias voltage to the gate determines the device operation.

The MRF171A has been specifically designed for RF amplifier applications and is especially suited for use in linear amplifiers and power amplifier circuits and radio frequencies in the range of 144 to 148 MHz and power output levels of up to 150W, depending on the efficiency. The MRF171A provides excellent power gain, high operating temperature of up to 150 degrees Celsius, very low on-state resistance and fast switch-on delays. It is also noteworthy that the MRF171A features an improved linearity up to 500 MHz, which makes it ideal for multi-channel RF amplifier systems.

In conclusion, the MRF171A is an excellent choice for medium to high-power RF amplifier applications and provides an excellent combination of high performance and robust performance. It features a wide frequency response, improved linearity at higher frequency, and improved power gain. The MRF171A is especially suited for use in multi-channel RF amplifier systems and can be used in linear amplifier and power amplifier stages.

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