MRF19030LSR5

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The MRF19030LSR5 is a N-channel enhancement-mode power field-effect transistor (FET) designed for use as a microwave power amplifier, broadband amplifier, and upconverter in applications such as radio systems and land mobile equipment. This transistor is fabricated on a GaAs pseudomorphic, high electron mobility transistor (pHEMT) process and is capable of operation over a wide frequency range while achieving a high gain, high efficiency, and low noise figure.

The MRF19030LSR5 features a Matched 30-Ohm Diamond Package which reduces losses caused by lead inductance and provides a much lower frequency cutoff point, allowing the device to be used in higher frequency applications and maintaining the thermal performance of the transistor. The drain is internally segregated providing a low capacitive device for high frequency applications.

To pulse, the MRF19030LSR5 must be biased using an external magnetic field generator. This device also has low on-resistance and low gate-to-drain capacitance. All these features combine to create a device which offers a wide bandwidth and high efficiency when used in RF applications.

The MRF19030LSR5 works on the principle of field effect transistors (FETs). FETs are based on the principle of controlling current flow by the application of a voltage to the gate terminal, thus allowing the device to be used as a voltage-controlled switch. The gate terminal controls the flow of electrons from the drain to the source terminals, thus allowing the current to be controlled. As the current flowing through the device is controlled by the voltage applied to the gate, FETs are classed as voltage-controlled devices.

As a microwave power amplifier, the MRF19030LSR5 uses high-frequency pulses to produce a pulse-voltage bias at the gate terminal which amplifies the output signals. These pulses can come from a microwave oscillator such as a Gunn diode or a frequency synthesizer, and the device can be configured to operate at frequencies up to 10 GHz. This makes the device suitable for use in a wide range of radio systems and land mobile equipment, including land mobile satellite communications, high data rate digital transmission, and mobile telephony.

In operation, the MRF19030LSR5 amplifies the input signal through the application of bias voltage controlled by an external magnetic field generator. The transistor has a low on-resistance and low gate-drain capacitance which results in a wide bandwidth and high efficiency when used in RF applications. This makes the device ideal for use in broadband amplifiers and upconverters, allowing it to achieve maximum performance at peak frequencies without sacrificing noise figure.

The MRF19030LSR5 is a reliable and efficient transistor designed for use in a wide range of RF applications such as microwave power amplifiers, broadband amplifiers, and upconverters. Its Matched 30-Ohm Diamond Package reduces losses and allows the device to operate at higher frequencies, while its low on-resistance and low gate-drain capacitance enable it to achieve high gain, high efficiency, and low noise figure at peak frequencies.

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