MRF18085ALSR5

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The MRF18085ALSR5 is a type of high frequency, high power Field Effect Transistor (FET). It is a Gallium Arsenide FET transistor designed for class-C and pulsed operation with UHF and Microwave applications. It is designed for use with 3 GHz to 3.6 GHz radio and communication systems.

The MRF18085ALSR5 has an advanced design that results in greater efficiency, faster operation and improved power levels while maintaining linear performance. It features a wide bandwidth and fully matched architecture to improve the stability of systems. It is also fabricated in an advanced package which is designed for easy installation in compact, confined spaces.

The operational working principle of the MRF18085ALSR5 is based on the Field Effect Transistor (FET) technology. FETs are transistors which use a thin surface-barrier layer around the gate of the transistor to control current flow. The FET works by passing a current through a semiconductor surface-barrier layer, or “channel”, while also passing a positively charged gate voltage. The effect of this combination is that the current passing in the channel is controlled and regulated by the applied gate voltage.

The MRF18085ALSR5 is often used in high frequency, high power circuit applications. These include RF power amplifiers, oscillators, and other types of circuits that require wideband operation. It provides good performance and reliability when used for these applications. It also provides a low noise performance and improved linearity for applications that require better clearances between channels.

The MRF18085ALSR5 offers a wide range of applications with its advanced design. It is suitable for operations such as broadcasting, UHF / VHF radio systems, and other communication systems that require high frequency, high power operation. With its advanced design and wide bandwidth, the MRF18085ALSR5 can also be used for metering and frequency synthesizers.

The MRF18085ALSR5 is an efficient way to integrate a wide range of applications within small, confined spaces. It features excellent performance, reliability, and a low noise performance. Additionally, it is fully matched and provides excellent linearity in its power level, making it suitable for increased stability in complicated systems. It is versatile, efficient and cost-effective, making it ideal for high frequency, high power operational applications.

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