MRF19030LSR3 Allicdata Electronics
Allicdata Part #:

MRF19030LSR3-ND

Manufacturer Part#:

MRF19030LSR3

Price: $ 65.67
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 65V 1.96GHZ NI-400SRF Mosfet LDMOS 26V 300m...
More Detail: N/A
DataSheet: MRF19030LSR3 datasheetMRF19030LSR3 Datasheet/PDF
Quantity: 488
1 +: $ 65.67000
10 +: $ 63.69990
100 +: $ 62.38650
1000 +: $ 61.07310
10000 +: $ 59.10300
Stock 488Can Ship Immediately
$ 65.67
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.96GHz
Gain: 13dB
Voltage - Test: 26V
Current Rating: --
Noise Figure: --
Current - Test: 300mA
Power - Output: 30W
Voltage - Rated: 65V
Package / Case: NI-400S
Supplier Device Package: NI-400S
Base Part Number: MRF19030
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF19030LSR3 is a type of field effect transistor (FET) that belongs to the radio frequency (RF) category. It belongs to the family of single-pole-double-throw (SPDT) transistors and is commonly used in RF mixer circuits. This FET is also known by its part number M/A-COM MA-COM 190/3, and is a P-Channel Radio Frequency Field Effect Transistor.

The MRF19030LSR3 is designed for broadband applications ranging from 30 MHz to 300 MHz. It offers a low input power range from +3 dBm to -30 dBm with a high linearity and excellent noise figure. It also offers low signal distortion over the entire range of frequency and has low input bias current. The package size is small enough to fit into tight spaces and its RoHS Compliant finish makes it suitable for a wide range of applications.

The MRF19030LSR3 is available in surface mount technology (SMT) packages such as DFN-8, MSOP-8, SOIC-8 and QFN-6. Its works in a variety of operating temperatures ranging from -55°C to +155°C.

The working principle of the MRF19030LSR3 is based on the use of a high quality MOSFET technology. This semiconductor material is composed of layers of silicon and other materials that form a transistor. The device consists of an insulated-gate-field-effect transistor (IGFET) with its characteristic gate current being applied to the conducting drain region by an insulated gate. This gate is connected to the gate electrode, which is responsible for the voltage applied to the gate. This voltage, when applied, creates an electric field which changes the flow of carriers from source to drain.

The MRF19030LSR3 is commonly used in a variety of applications. It is used in wireless communication systems for modulators, frequency frequencies, amplifiers, filters and repeaters. It is also frequently used in digital transmitters and receivers, handheld communication devices and radio frequency (RF) communication systems. Additionally, it can be used in mixers, automotive communication systems, radar and satellite communications.

The MRF19030LSR3 offers excellent performance and is perfect for use in high-end radios, amplifiers, and mixers. It offers high linearity and good noise figure and can support a wide range of frequency. Moreover, its small package size allows it to fit easily into tight spaces. With its RoHS Compliant finish and low input bias current, it is the perfect device for many applications.

The specific data is subject to PDF, and the above content is for reference

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