MRF1535FNT1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Transistor Type:	LDMOS
Frequency:	520MHz
Gain:	13.5dB
Voltage - Test:	12.5V
Current Rating:	6A
Noise Figure:	--
Current - Test:	500mA
Power - Output:	35W
Voltage - Rated:	40V
Package / Case:	TO-272BA
Supplier Device Package:	TO-272-6
Base Part Number:	MRF1535

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Introduction

The MRF1535FNT1 is an RF power FET (Field Effect Transistor) optimized for cell phone usage. It is a enhancement mode transistor that finds use in power amplifier circuits, especially in mobile devices such as cell phones, portable transceivers and other ultra-broadband applications. It is designed to bring high efficiency operation with minimum power consumption. It has very low input bias current, low voltage drops and minimal cross-modulation. Its wide operating frequency range (800MHz to 1000MHz) enables it to be used for almost any communication needs.Working principle

The MRF1535FNT1 is composed of two components; the control electrode and the gate electrode or "gate." Both of these components control the flow of current through the transistor\'s channel. In a MOSFET transistor, a voltage is applied to the gate. This voltage produces an electric field in the transistor\'s channel. This electric field can modify the number of electrons that can pass through the transistor\'s channel. In an enhancement-mode transistor, an external voltage must first be applied to the gate before current can flow through the transistor\'s channel.When the voltage applied to the gate is positive with respect to the transistor\'s channel, the electric field produced in the channel attracts negatively charged electrons and repeals positively charged ones. This reduces the number of available electrons for conduction and thus limits the current passing through the transistor\'s channel.In contrast, when the voltage applied to the gate is negative with respect to the transistor\'s channel, the electric field produced in the channel attracts positively charged electrons and repels negatively charged ones. This increases the number of available electrons for conduction and thus allows the greater current passing through the transistor\'s channel.Application field of MRF1535FNT1

Due to its wide operating frequency range, the MRF1535FNT1 is ideally suited for use in cellular base station power amplifiers. It can be used to amplify signals up to 1200MHz which is suitable for global cellular applications. The FET\'s low noise figure and low input bias current make it ideal for use in mobile devices that require the utmost power efficiency and low heat dissipation. It is also suitable for use in ultra-broadband applications such as global navigation satellite systems. In addition, it can be used in RF applications that utilize 50 ohm systems such as satellite receivers and digital standard definition TV receivers.The MRF1535FNT1 is also suitable for use in digital circuits that require very fast switching. It is capable of switching at speeds of up to 10GHz and its low power consumption makes it ideal for low power applications such as portable electronics and wearables.Conclusion

The MRF1535FNT1 is an RF power FET that is optimized for cell phone usage. It is an enhancement mode transistor that finds use in power amplifier circuits, especially in mobile devices such as cell phones and portable transceivers. Its wide operating frequency range enables it to be used for wireless communication, global navigation satellite systems, digital standard definition TV receivers, and other ultra-broadband applications. Its low noise figure, low input bias current, and fast switching time make it ideal for portable electronics, wearables, and other low power applications.

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