
Allicdata Part #: | MRF1K50N-TF4-ND |
Manufacturer Part#: |
MRF1K50N-TF4 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MRF1K50N-TF4 |
More Detail: | RF Mosfet LDMOS 50V 100mA 1.8MHz ~ 500MHz 23dB OM... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.8MHz ~ 500MHz |
Gain: | 23dB |
Voltage - Test: | 50V |
Current Rating: | 10µA |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | -- |
Voltage - Rated: | 133V |
Package / Case: | OM-1230-4L |
Supplier Device Package: | OM-1230-4L |
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The MRF1K50N-TF4 is an RF field effect transistor (FET) from NXP Semiconductor. It is used in radio frequency (RF) amplifiers and switching applications such as television, radio receivers and other communications devices. It has a maximum power output of 50 watts, a drain-source voltage of 150 volts and a drain-source on state resistance of 0.0014 ohms.The device is designed to work in high frequency environments, up to 200MHz. It is designed with a gate-drain voltage of 25 volts and has a low input capacitance for a low noise performance. The device also features a low gate charge and fast switching capability, making it suitable for high speed data communication applications.The MRF1K50N-TF4 is manufactured with a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure. It consists of four terminals: a gate, drain, source and body. When a voltage is applied across the gate and source terminals, a transverse electric field is created. This allows for current to flow between the drain and source terminals, thereby producing a switching action.In operation, the device is designed with a P-channel and an N-channel MOSFET in series. When the gate-source voltage is increased, the P-channel turns on, allowing the current to flow from the drain to the source. This increases the voltage drop between the drain and source, and the device is said to be in the ‘on-state’.When the gate voltage is decreased, the N-channel MOSFET is then turned on, allowing the current to flow from the source to the drain. This reduces the voltage drop between the drain and source and the device is said to be in the ‘off-state’.The MRF1K50N-TF4 has a number of advantages over other types of FETs. These include a higher gain and higher efficiency, as well as a capability for alternating current (AC) switching. This makes the device suitable for high-power RF applications, such as for radio and TV transmitters. It is also suitable for low noise and high frequency communications applications such as WiFi, Bluetooth, satellite and mobile phone radio communications.The MRF1K50N-TF4 is widely used in many applications, with a wide range of uses in the automotive, industrial, medical and consumer electronics industries. It is an important component in a variety of RF amplifiers and applications, providing power and performance in a range of RF applications. As a result, the MRF1K50N-TF4 is a highly versatile and robust option for use in a range of different RF applications.
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