MRF1517NT1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRF1517NT1 is a RF power FET (Field Effect Transistor) intended for use in 28V VHF, UHF, and 800MHz CDMA applications. The FET adopts advanced low-cost Microwave Monolithic Integrated Circuit (MMIC) technology, including an integrated power capacitor, which allows the device to provide reliable operation in the most demanding RF power applications. This FET device is designed with high-voltage, wideband, and high-power characteristics which make it suitable for a range of communication system operations.

The MRF1517NT1 is a two-terminal, metal-oxide-semiconductor (MOS) FET device. The device contains a single MOS transistor and a power capacitor integrated into a single package. It is constructed from gallium arsenide (GaAs) and has a surface mount design to maximize the device\'s power handling capabilities in a minimal form factor. The device has a maximum drain-to-source voltage (VDS) of 28V, which allows for efficient, high-power operation. The RF power transistor has a maximum output power of 33dBm and an efficiency of up to 93%. It also has a wideband frequency range of 500MHz to 1000MHz, which allows it to be used in both low and high frequency systems.

The MRF1517NT1 works on the principle of gate-controlled conduction through an insulated gate formed by a MOSFET. The voltage of the gate relative to its source controls the current flow through the device, either on or off. This allows the device to be used as a switch. The device also provides power amplification and has high input impedance. The device is designed with high gain and low noise characteristics, offering excellent linearity and low distortion at high power levels.

The MRF1517NT1 is used in a variety of applications, such as CATV power recording, broadband amplifiers, EMC generators, and radar systems. It is also used in VHF, UHF, and 800MHz CDMA applications. Additionally, it is widely deployed in RF communication systems for cellular, satellite, microwave, and industrial applications, as well as wireless power transmission systems.

MRF1517NT1 is an effective and reliable FET device for high power, high gain, and high linearity RF power transistor applications. It is highly reliable and efficient, making it an ideal choice for a range of applications. The device comes in a surface mount design, which increases power handling and provides minimal form factor. The wideband frequency range and high voltage capability also make the device versatile and suitable for a variety of system operations.

The specific data is subject to PDF, and the above content is for reference