MRF1511NT1 Discrete Semiconductor Products |
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Allicdata Part #: | MRF1511NT1TR-ND |
Manufacturer Part#: |
MRF1511NT1 |
Price: | $ 4.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 40V 175MHZ PLD-1.5 |
More Detail: | RF Mosfet LDMOS 7.5V 150mA 175MHz 13dB 8W PLD-1.5 |
DataSheet: | MRF1511NT1 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 4.22293 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | LDMOS |
Frequency: | 175MHz |
Gain: | 13dB |
Voltage - Test: | 7.5V |
Current Rating: | 4A |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 8W |
Voltage - Rated: | 40V |
Package / Case: | PLD-1.5 |
Supplier Device Package: | PLD-1.5 |
Base Part Number: | MRF1511 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF1511NT1 is a high-performance radio frequency field-effect transistor (RF FET) from NXP Semiconductors. It has been designed for use in a range of applications, such as mobile radio, broadcast television, GPS tracking and monitoring systems, two-way radio, and wireless data links. It is suitable for frequencies up to 500 MHz. This transistor can be used in both linear and nonlinear applications, which makes it an ideal choice for RF designers.
The MRF1511NT1 is based on advanced 0.15 micron transistor technology, which makes it extremely small. It is available in a 6-pin TO-39 package, and features a power gain of 15 dB at 500 MHz. The minimum noise figure is 15 dB, and the maximum operating temperature is 150 degrees Celsius. The maximum input voltage rating is 2.5 volts, and the maximum output power is 9.0 W.
The working principle of the MRF1511NT1 transistor is simple. It uses a source terminal to which voltage is applied. This voltage creates an electric field in the device, which carries current from the drain to the gate. The frequency of the applied voltage determines the frequency of the current. When the current passes through the transistor, it creates a voltage drop across its channel. This voltage drop is then transferred to the gate, which increases or decreases the channel conductivity and thus the current flow.
The MRF1511NT1 is ideal for applications requiring high-frequency performance, low voltage and low noise. It can be used as a low-noise pre-amplifier, transistor mixer or RF amplifier. Its low gain makes it ideal for low-power applications, such as portable communication systems. In receivers and transmitters, it can be used as an oscillator or mixer. It can also be used in RF amplifiers for automotive applications.
The MRF1511NT1 is available in a range of sizes and shapes, and can be used for a variety of applications. It has a high gain and low noise figure, which makes it ideal for RF applications. Its 0.15 micron transistor technology provides superior performance and reliability, making it an excellent choice for RF designers. Overall, the MRF1511NT1 provides superior performance, low voltage and low noise, making it a versatile and attractive option for a variety of RF applications.
The specific data is subject to PDF, and the above content is for reference
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