Allicdata Part #: | MRF19125R5-ND |
Manufacturer Part#: |
MRF19125R5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.93GHZ NI-880 |
More Detail: | RF Mosfet LDMOS 26V 1.3A 1.93GHz 13.5dB 24W NI-880 |
DataSheet: | MRF19125R5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz |
Gain: | 13.5dB |
Voltage - Test: | 26V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 24W |
Voltage - Rated: | 65V |
Package / Case: | NI-880 |
Supplier Device Package: | NI-880 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRF19125R5 is a 5-watt 125-MHz bipolar radio frequency (RF) power transistor from Motorola. It can be used for a variety of radio frequency power amplifier applications. This transistor is capable of steady-state frequencies from 10 to 150 MHz, input powers from 0.3 to 7.5 watts, and output powers from 0.3 to 5 watts. This transistor is manufactured to provide optimal performance for radio frequency applications and is designed to withstand high voltage and temperature extremes.
The MRF19125R5 is a field effect transistor (FET) that utilizes metal–oxide–semiconductor (MOS) technology. It has opposing source and gate electrodes, with the source connected to the silicon base and the gate connected to the drain. The FET design allows current to be regulated by the voltage applied to the gate, making the device more efficient than a bipolar transistor. The gate voltage is normally a fraction of the voltage applied to the drain, allowing for more efficient amplification of signals.
The MRF19125R5 has a number of key features that make it an ideal choice for RF power amplifiers. It has an RF power range of 5 watts, which makes it suitable for many short-to-medium range applications. It also has a large linearity range, which helps to minimize interference during transmission. The device is built with an efficient output matching network and a low noise figure, allowing it to produce high quality output signals.
The MRF19125R5 utilizes an integrated heatsink to manage its thermal dissipation, increasing its reliability and making it suitable for harsh environments. It also features an integrated dual-gate ESD protection mechanism which helps to reduce static electricity and keep the device functional. The device can be protected against over-voltage conditions using an external transistor.
The MRF19125R5 is a versatile device and can be used in a wide range of applications. It is suitable for use in base stations, radio-frequency broadcast transmitters, two-way radio systems, cellular radio systems, and wide-area communications systems. It is also suitable for use in industrial, automotive, telecommunications, navigation, and data applications.
In conclusion, the MRF19125R5 is a highly-efficient FET power amplifier suitable for a variety of radio frequency applications. It has an impressive power rating of 5 watts, a large linearity range, and an integrated heatsink to keep it running smoothly. The device is also protected against static electricity and over-voltage conditions, making it reliable and long lasting. Overall, the MRF19125R5 is an ideal choice for radio frequency amplifiers.
The specific data is subject to PDF, and the above content is for reference
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