MRF19125R3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	1.93GHz
Gain:	13.5dB
Voltage - Test:	26V
Current Rating:	--
Noise Figure:	--
Current - Test:	1.3A
Power - Output:	24W
Voltage - Rated:	65V
Package / Case:	NI-880
Supplier Device Package:	NI-880

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<p>Radio frequency (RF) transistors are a key descriptor in the manufacturing of antennas and necessary electronics. Specifically, the MRF19125R3 is commonly used in applications that require a power amplifier (PA) with good take-off and reception performance. This particular model is compatible with peak base current (Ib) of between 800mA and 2A, and peak drain current (Id) of between 2.2A and 3A. In order to maximize the performance of the MRF19125R3 and other RF transistors, one must first analyze the working principle.A MOSFET, or a “metal-oxide-semiconductor field-effect transistor”, is a device that is typically used for oscillators and amplifiers for both analog and digital signals, as it is less sensitive to change in its environment. Using an inverting amplifier with a single MOSFET transistor increases the dynamic range, meaning that it can push out higher power outputs without any additional hardware. The MOSFET amplifies this dynamic range by utilizing the drain of the MOSFET and the gate of the MOSFET. As current flows into the gate, depending on the frequency and the size of the device, the input signal can be amplified without any distortion in output.Firstly, the MRF19125R3 transistor has to be connected to a voltage source of sufficient strength in order to function correctly. This is done by hooking up the +Vdc input to the drain of the transistor. Next, the signal will have to be supplied to the gate of the device. This signal should be precisely matched to the frequency of the intended transformer. It is also recommended to use a coupling capacitor to prevent high frequency signals from changing the bias conditions of the device. Once the MRF19125R3 transistor is fully connected, it will begin to show relevant characteristics that are effectively converted into a usable signal. The large signal limit of the transistor is controlled by the drain current of the device, which ultimately determines the output power of the circuit. Furthermore, the supply voltage of the transistor plays a major role in determining the maximum available gain, as well as the linearity of the device at higher power levels. Additionally, due to the gate-source capacitance of the MOSFET, an increase in cutoff frequency can be observed in the circuit.When speaking of the general application field of the MRF19125R3 transistor, it is typically used for the production of antennas or other specialized signals that use power amplifiers to achieve high-frequency communications. It is often used in positioner systems, variable attenuators, converters, and other electronic components that require some form of RF technology in order to function. In conclusion, the MRF19125R3 is a highly versatile transistor used in multiple different RF applications. Its key features, such as the high peak drain current of 3 Amp and peak base current of 2 Amp, make it a great choice for those who are looking for high gains at a series of frequencies. Additionally, its ability to withstand larger voltages helps avoid any form of distortion, while still achieving the desired output power.</p>

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