![MT52L256M32D1PD-107 WT ES:B TR Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MT52L256M32D1PD-107WTES:BTR-ND |
Manufacturer Part#: |
MT52L256M32D1PD-107 WT ES:B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 8G 933MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR3 Memory IC 8Gb (256M x 32) 9... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR3 |
Memory Size: | 8Gb (256M x 32) |
Clock Frequency: | 933MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.2V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The memory, MT52L256M32D1PD-107 WT ES:B TR, is a very powerful and reliable integrated chip in the field of embedded memory solutions. It is a high-end, single-chip solution with a very competitive feature set that is ideal for applications such as consumer electronics, medical and automotive related systems. With its wide feature set, this chip is capable of supporting a variety of challenging applications, and has been known for its stability and dependability in these applications.
The MT52L256M32D1PD-107 WT ES:B TR is a double data rate Synchronous Dynamic Random Access Memory (SDRAM), equipped with a 32-bit wide internal and external data interface, and a 32-bit wide address interface. It also provides for up to 8 banks of memory organized into 8 rows and 8 columns. This provides a total capacity of up to 256Megabits (32M x 8).
In addition to the memory, the chip also contains built-in write protection and dynamic burst mode support. This allows the memory to be used in applications where write protection is an essential requirement, such as automotive systems or medical applications. Furthermore, the chip also supports Error Correction Code (ECC) for enhanced data protection. This makes it an ideal choice for applications where data integrity is critical.
The chip also supports a high-speed burst mode that can be used to increase performance in demanding applications where a large amount of data needs to be processed quickly. This burst mode increases data throughput by transferring a single 32-bit data block without any additional wait cycles or burst latency. This significantly reduces the time required for data transfer and the resulting overall system performance.
The MT52L256M32D1PD-107 WT ES:B TR is a very versatile memory solution designed for a wide range of embedded applications. Its wide variety of features make it an ideal choice for applications that require stability, reliability and performance. Its built-in features make it suitable for applications where write protection and data integrity are required. Its high-speed burst mode provides increased performance and its support for ECC ensures data integrity and fault tolerance. Furthermore, its double data rate and its wide range of addressing modes make it an attractive choice for embedded applications.
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MT52L256M32D1PD-107 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G 933MHZ FBGASDR... |
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MT52L256M64D2PD-107 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
MT52L256M64D2PD-107 XT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
MT52L256M64D2PD-107 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 933MHZ FBGASD... |
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