NAND512W3A2BZA6E Allicdata Electronics
Allicdata Part #:

497-5041-ND

Manufacturer Part#:

NAND512W3A2BZA6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC FLASH 512M PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5...
DataSheet: NAND512W3A2BZA6E datasheetNAND512W3A2BZA6E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (8.5x15)
Base Part Number: NAND512
Description

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NAND512W3A2BZA6E is a memory device belonging to the NAND (or Negative-AND) family. It is a high-density non-volatile Flash memory device used to store large amounts of data. Typically, NAND memory devices are used in devices such as smartphones, tablets, digital cameras and other consumer electronics applications. It is an ideal choice for a variety of applications as it provides good performance, is highly reliable and is easy to integrate into a system.

The NAND512W3A2BZA6E is composed of a NAND (or Negative-AND) array. This type of array contains 8,192 cells, each with an individual floating gate. Each cell can store 1 bit of information. The cells are arranged in a matrix configuration of 512 words (each word comprising 8 bit cells) by 16 pages (each page comprising 64 words).

The NAND512W3A2BZA6E supports three different types of operations, namely Read, Erase, and Program. During a Read operation, the contents of the cells can be read from the NAND array and outputted to external devices or memory. During an Erase operation, the contents of the cells can be erased from the NAND array. Finally, during a Program operation, new information can be written or programmed into the cells.

The NAND512W3A2BZA6E is a reliable and cost effective memory solution for a variety of applications. It is widely used in mobile phones, portable media players, digital cameras, gaming systems, and other consumer electronic devices. It is ideal for applications that require high-density, reliable, and low-power memory solutions. The NAND512W3A2BZA6E is also a good choice for applications that require a large amount of data storage capacity and a low latency time, such as video streaming.

In summary, the NAND512W3A2BZA6E is a popular choice as a high-density non-volatile Flash memory device due to its reliability, cost effectiveness, good performance and low power consumption. The NAND array is composed of 8,192 individual cells, each of which can store 1 bit of information. Its supports the three different operations of Read, Program, and Erase, making it an ideal choice for a variety of applications. It is widely used in mobile phones, portable media players, digital cameras, gaming systems, and other consumer electronic devices.

The specific data is subject to PDF, and the above content is for reference

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