Allicdata Part #: | NAND512W3A2CN6E-ND |
Manufacturer Part#: |
NAND512W3A2CN6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 48TSOP |
More Detail: | FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5... |
DataSheet: | NAND512W3A2CN6E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NAND |
Memory Size: | 512Mb (64M x 8) |
Write Cycle Time - Word, Page: | 50ns |
Access Time: | 50ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | NAND512-A |
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Memory plays an important role in the current personal computer environment. The NAND512W3A2CN6E memory (or "NAND") is a high-speed, non-volatile flash storage option that is capable of storing data up to 512 Gigabytes (512GB) in size. The NAND512W3A2CN6E memory was developed by Toshiba and is currently being manufactured by a number of major companies, including SanDisk and Kingston Technology. The NAND512W3A2CN6E is a cost-effective solution for applications that require high storage capacities and a fast response time.
The NAND512W3A2CN6E can be used in a variety of applications, including consumer electronics, industrial automation, and military and aerospace uses. Its non-volatile nature means that it can retain data even when power is lost, making it an ideal choice for applications that need persistence of data. The NAND512W3A2CN6E is a type of NAND Flash memory, which is a type of memory technology based on the floating-gate transistor structure. The NAND512W3A2CN6E offers a high-capacity storage solution, up to 512GB, making it an ideal storage option for digital photographs, videos, audio files and other large data files.
The NAND512W3A2CN6E works by utilizing an array of floating gate transistors, arranged in an interlocking fashion, as its memory cells. Each memory cell stores a single bit of data, which is accessed by applying a voltage to the memory cells. A higher voltage leads to a 1 bit being stored, and a lower voltage will store a 0 bit. Thus, the NAND512W3A2CN6E is able to read and write data to and from its memory cells quickly and reliably.
The NAND512W3A2CN6E also features features a number of features that make it attractive to users and industries alike. It has a fast response time, capable of writing data at up to 8MB/s and reading at up to 10MB/s. It also has wear-leveling technology that spreads out the wear to all cells in the memory, and Error Correcting Code (ECC) that provides extra protection against unrecoverable errors. The NAND512W3A2CN6E also provides enhanced security features, with data and address encryption to add an extra layer of security to sensitive data.
The NAND512W3A2CN6E is an attractive storage solution for a range of industries and applications. Its low power consumption and high storage capacity make it an ideal option for consumer electronics and industrial automation, while its fast access times and enhanced security features make it an attractive choice for military and aerospace applications. The NAND512W3A2CN6E is a reliable and cost-effective memory option for any application that requires high storage capacity, low power consumption and fast response time.
The specific data is subject to PDF, and the above content is for reference
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