NAND512R3A2SZA6E Allicdata Electronics
Allicdata Part #:

NAND512R3A2SZA6E-ND

Manufacturer Part#:

NAND512R3A2SZA6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 63VFBGA
More Detail: FLASH - NAND Memory IC 512Mb (64M x 8) Parallel 5...
DataSheet: NAND512R3A2SZA6E datasheetNAND512R3A2SZA6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Mb (64M x 8)
Write Cycle Time - Word, Page: 50ns
Access Time: 50ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-TFBGA
Supplier Device Package: 63-VFBGA (9x11)
Base Part Number: NAND512
Description

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The NAND512R3A2SZA6E is a type of memory device, or a type of nonvolatile storage. It is commonly used for a variety of applications, ranging from boot code storage in embedded systems, to data storage in consumer electronics like USB drives. It is one of the most popular types of flash memory because it has a number of advantages over other types of memory, such as DRAM or SRAM. The main advantage is that it is nonvolatile, meaning that it does not need to be refreshed or powered to retain its data. It is also much faster than other types of memory, making it ideal for reading and writing data at a rapid rate.

The NAND512R3A2SZA6E is a type of 512 megabit NAND flash memory. The 512 megabits refer to the size of the memory chips, being 32 megabytes in size. Each chip is composed of thousands of separate data blocks, which can then be individually programmed. This means that you can have a large amount of data stored in a relatively small amount of space, making it very useful in data storage applications.

The NAND512R3A2SZA6E works by storing information in a small cell, usually referred to as a cell. These cells are made up of a charge-controlling layer, a logic layer, and a memory plane. In order to read and write the stored data, a voltage is applied to the cells, which causes the data to de-accumulate or accumulate, depending on the type of operation being performed. Each cell can store one bit of data, which is either 0 or 1. Data is written to the cells through a process known as programming, and is erased from the cells through a process known as erase.

In addition to its useful data storage applications, the NAND512R3A2SZA6E is also used in other applications. For example, it can be used as an embedded non-volatile memory in microcontrollers, which are used to control a variety of electronic systems. It is often also used in digital photography cameras, as it can be used to quickly and easily store raw image data quickly. Finally, some versions of the NAND512R3A2SZA6E are used in certain mobile phones to store and manage user data, such as contacts and text messages.

Overall, the NAND512R3A2SZA6E is a powerful and reliable type of non-volatile storage. It can be used for a wide variety of applications, and is ideal for applications that require high data storage capabilities and fast access times. It is extremely durable, making it perfect for mission-critical applications, and it is also easy to program and erase. As a result, it is one of the most popular types of memory used in today\'s digital world.

The specific data is subject to PDF, and the above content is for reference

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