Allicdata Part #: | NDS331N_D87Z-ND |
Manufacturer Part#: |
NDS331N_D87Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 1.3A 3SSOT |
More Detail: | N-Channel 20V 1.3A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | NDS331N_D87Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 162pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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NDS331N_D87Z application field and working principle
The NDS331N_D87Z is a Single N-channel Logic Level MOSFET. N-channel MOSFETs are semiconductor devices that are used to amplify or switch electronic signals. They feature a wide range of power handling capability, improved efficiency, and enhanced standard gate drive characteristics.
Application
The NDS331N_D87Z is used in a wide variety of applications such as:
- DC motor control
- Switched mode power supplies
- Computer peripheral power switching
- Lighting control
- Level switching
- Instrumentation
Due to its excellent switching properties, the NDS331N_D87Z is ideal for consumer electronics, automotive, and communication applications. It is also used in industrial and military applications as it has a relatively low on-state resistance and can operate at high frequencies.
Working Principle
The NDS331N_D87Z is an enhancement-mode polysilicon gate N-channel MOSFET. It is specifically designed for applications that require both high speed switching and high current capability. Its design ensures low on-state resistance and low gate-source capacitance, thus making it suitable for switching and low voltage applications.
The working principle of the NDS331N_D87Z is based on the basic concepts of semiconductor physics. It works on the principle of creating an electric field in the channel to control the current flow. When a positive voltage is applied to the gate terminal, the electric field creates an inversion layer of electrons and holes in the channel. This combination of electrons and holes are called minority carriers. When the gate voltage rises, an attractive force is created between the source and drain and the minority carriers move from one side to the other, resulting in current flow from the drain to the source.
The gate-source voltage also affects the performance of the NDS331N_D87Z. When the gate voltage is lower than the threshold voltage or "VT", the N-channel is closed and no current flows. The NDS331N_D87Z can be switched on and off with a very low gate voltage, making it suitable for switching applications that require a low turn-on voltage.
The NDS331N_D87Z has excellent thermal characteristics and can handle high current, making it suitable for high power applications. Its low RDS(ON) makes it ideal for applications with high-speed switching, while its low gate-source capacitance ensures fast switching time.
The specific data is subject to PDF, and the above content is for reference
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