NDS332P Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SuperSOT-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	195pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	5nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	300 mOhm @ 1.1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NDS332P is an advanced field effect transistor (FET) featuring high performance, low on-resistance, and fast switching capability. It is a N-channel enhancement mode MOSFET, capable of being operated at very low drain-source and gate-source voltages. This is achieved with its advanced fabrication process and design, providing fast and reliable switching performance.NDS332P is ideal for a variety of applications, but particularly in applications which require high-frequency switching. These applications are found in the areas of power management, audio, video and lighting. It is also suitable for use in switching applications in automotive, computers, communications, and consumer electronics.The transistor features a very high on-resistance of 1.1 Ohms (RDS(on)). It also has a very low gate charge at 212 pF, and a fast switching speed of 3.2 ns. This makes the transistor suitable for applications where high frequency switching is needed, such as high speed data switches and converters.The working principle behind the NDS332P is simple. It consists of an array of N-type MOSFETs connected in series. The MOSFETs are connected in series to create a "mirror image" of the voltage applied to the gate of the first MOSFET. This mirrored voltage is then applied to the gate of each successive MOSFET.This phenomenon allows the first MOSFET to be turned on and off quickly, allowing fast switching speeds. Additionally, the on-resistance of the first MOSFET is effectively reduced, resulting in a very low on-resistance (RDS(on)) of 1.1 Ohms.NDS332P is one of the most popular transistors used in high frequency switching applications. Its very low on-resistance, fast switching speeds, and low gate-charge make the NDS332P an ideal choice for many different types of applications.NDS332P is very reliable and durable, and has a track record of delivering reliable results in a wide range of applications. Additionally, it is also relatively easy to use and install, making it a popular choice for many engineers. It also comes in various package sizes, making it suitable for many different types of applications.Overall, the NDS332P is an advanced field effect transistor which is capable of providing fast, reliable and efficient switching operations in many different types of applications. Its low on-resistance, fast switching speeds, and low gate-charge make the NDS332P an ideal choice for high frequency switching applications. It is also very easy to use, making it one of the most popular transistors in many different types of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description