NDS356AP Discrete Semiconductor Products |
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Allicdata Part #: | NDS356APTR-ND |
Manufacturer Part#: |
NDS356AP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 1.1A SSOT3 |
More Detail: | P-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | NDS356AP Datasheet/PDF |
Quantity: | 30000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.4nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NDS356AP is a type of single-gate metal-oxide-semiconductor field-effect transistor (MOSFET) from ON Semiconductor. The device is widely used for its high output-current handling capability and for its wide range of applications. It has been used for power switching applications, such as in controlling the feedback loop of an audio amplifier or for controlling the current in a motor or for switching high power supplies. The NDS356AP is also popular for its low RDS, which stands for its resistance of the drain-source channel. This low resistance allows for superior current flow and minimal heat loss. This makes it a good choice for switching high loads.
The NDS356AP is categorized as a “deeply-depleted, symmetric body-diode device”. This means that it has a symmetrical body-diode which is deeply depleted and also gate-controlled by the application voltage. In other words, the device responds to the voltage applied to its gate, which gets positively-biased when it is in the “ON” state. The NDS356AP can also be in the “OFF” state, when the gate voltage is in the negative ground potential. This is advantageous as it eliminates the need for additional circuitry such as relays or switches. In addition, the NDS356AP can be switched on and off in a very short amount of time due to its fast switching speed.
The NDS356AP’s application field and working principle are further enhanced by its forward bias characteristic. This characteristic allows the NDS356AP to be used in power switching applications, as it can be operated with a voltage lower than its threshold voltage. This means that it can be used in low power applications, such as controlling the current supply of a motor or other small device. In addition, the NDS356AP can be used for higher power applications, as it has a maximum current handling capability of up to 50A.
The NDS356AP also has a high frequency applicability. This allows it to be used in applications where switching times are crucial, as it can be operated with 2MHz and beyond frequency. This makes it suitable for applications where speed is needed, such as in audio amplifiers or for switching high power supplies.
In conclusion, the NDS356AP is a single-gate MOSFET device with a high output current handling capability and low RDS. It can be used in a wide range of applications and is especially suitable for switching high loads due to its low resistance. The NDS356AP also has a high frequency applicability, allowing it to be used in power switching applications where speed is crucial.
The specific data is subject to PDF, and the above content is for reference
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