NDS331N Discrete Semiconductor Products

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1. Describe

These N-channel logic level enhancement mode power field effect transistors are used ON Semiconductor proprietary, high Cell density, DMOS technology. This very high density process is Designed to minimize on-resistance. These devices are Especially suitable for low voltage applications in notebook computers Computer, Cellular Phone, PCMCIA Card and Other Batteries power supply circuits, where fast switching and low in-line power loss required in a very small outline surface mount package.

2. Feature

    1. 1.3 amps, 20 volts

        - RDS(on) = 0.21 @ VGS = 2.7V

        - RDS(on) = 0.16 @ VGS = 4.5V

    2. Industry Standard Outline SOT−23 Surface Mount Package Use Proprietary SUPERSOT−3 design for superior thermal and electrical capability

    3. High-density battery design with extremely low RDS(on)

    4. Excellent on-resistance and maximum DC current capability

    5. This is a Pb-free device

3. pin configuration