NDS335N Discrete Semiconductor Products |
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Allicdata Part #: | NDS335NTR-ND |
Manufacturer Part#: |
NDS335N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 1.7A SSOT3 |
More Detail: | N-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | NDS335N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 10V |
Vgs (Max): | 8V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 1.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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N-channel enhancement mode Field-Effect Transistor (FET) NDS335N is a robust and reliable device that is used in a variety of applications. This FET is typically used in small signal amplifier circuits. It consists of just one terminal, the gate through which the supply voltage is controlled. This is then converted into a current that flows through the drain and source of the transistor.
In an N-channel FET, the gate acts as an open circuit which is voltage dependent. This allows the device to act as a variable resistor and effectively control the current in the circuit. When the gate voltage is increased, it increases the current of electrons from the drain to the source, thus turning the device on. This is described as an Enhancement mode FET.
The NDS335N has a drain to source breakdown voltage of 30 Volts, while the maximum drain current is 30 milliAmps. When in its normal operating mode, the device has a relatively high on-resistance. This means that it can efficiently control the current in the circuit and also reduce power loss.
The NDS335N is often used in amplifying low-level signals such as amplifying the signal from a microphone. This is because the FET has a relatively high gain compared to other types of amplifying devices. This allows the device to amplify small signal voltages without having to increase the supply voltage significantly.
Another application for the NDS335N is in switching circuits. Here, the device acts as a switch, and when the gate voltage is increased, this turns the device on and activates the device. The device can then be used to control the current in the circuit, such as turning a motor on and off.
The NDS335N is a cost-effective and reliable device for a variety of applications. It is capable of amplifying low-level signals and turning on and off motors and other devices. Because of its relatively high on-resistance, it can efficiently control the current in the circuit and reduce power loss. This makes the NDS335N an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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