NDS351N Discrete Semiconductor Products |
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Allicdata Part #: | NDS351NTR-ND |
Manufacturer Part#: |
NDS351N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.1A SSOT3 |
More Detail: | N-Channel 30V 1.1A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | NDS351N Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NDS351N is a logic level N-Channel enhancement mode power MOSFET fabricated by advanced CMOS technology. It consists of a p-channel enhancement mode power MOSFET and integrated circuit. It has an array of features that make it highly desirable for a variety of applications, such as power management and RF power amplification. Additionally, the features which include ESD protection, low gate threshold voltage, high switching speed, have contributed to NDS351N becoming the leading device used in these applications.
NDS351N has a variety of application fields in which it can be used. It is commonly used as a switch to regulate the supply of current and voltage in various electronic devices including laptops, televisions, audio systems, and computers, as well cell phones and tablets. Furthermore, NDS351N can also be found in automotive applications, including ignition systems, fuel injection, and antilock brake systems. NDS351N can also be used for power amplifier design, such as those found in satellite communications.
The working principle behind NDS351N is based on a Gate Voltage. In the "on" state, NDS351N is an efficient switch, allowing current to flow through the source and drain terminals. When the gate voltage is turned off or falls below the threshold voltage, NDS351N becomes an efficient insulator, preventing current from flowing through the source and drain terminals. In this way NDS351N can be used to regulate the flow of current and voltage in various electronic devices. It is also important to note that NDS351N is a logic level device, meaning that the voltage level at which will transition into the "on" state is below the general transistor transition voltage.
NDS351N is a versatile and efficient device typically utilized for a variety of applications. Its low gate threshold voltage, ESD protection and high switching speed make it a desirable choice for many devices. Furthermore, its ability to regulate the flow of current and voltage make it a preferred choice for automotive applications, power management, and RF power amplifiers. When considering the use of NDS351N it is important to remember the Gate Voltage as this will determine the efficacy of NDS351N in each application.
The specific data is subject to PDF, and the above content is for reference
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