
NDS336P Discrete Semiconductor Products |
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Allicdata Part #: | NDS336PTR-ND |
Manufacturer Part#: |
NDS336P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1.2A SSOT3 |
More Detail: | P-Channel 20V 1.2A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SuperSOT-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 8.5nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.3A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NDS336P is a single common source dual depletion mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is widely used in various applications which require both high-frequency operation and low-power consumption. In addition, it can also be used for switching, switching speed control, audio applications and automotive applications, among many others.
The NDS336P is characterized by a 20V drain-to-source voltage rating and uses a 3-pin package with a source, gate, and drain. It has a maximum drain current of 55mA, an on-state resistance of 16Ω and a typical gate threshold voltage of -4.4V. It is developed for general purpose switching and load switching applications with a wide variety of features.
The NDS336P works on the principle of a depletion mode MOSFET. This type of MOSFET utilizes the principle of Coulomb\'s Law to control the electric potential barrier at the gate by creating electric field forces on the gate region. The design of the NDS336P includes a specially designed gate region structure, which ensures a low gate to source resistance, contributing to improved on-state resistance and low power consumption.
The NDS336P can be used in various applications, depending on the particular use case. It is most commonly used for load switching applications and switching applications due to its low power consumption and on-state resistance. It can also be used in audio applications, wherein it is used to efficiently switch high frequencies signals due to its fast switching speed. It is used in automotive applications as a low-power switch due to its low gate resistance and low drain to source leakage. Lastly, the NDS336P can also be used for controlling switches, since it allows for precise control of the drain current.
In conclusion, the NDS336P MOSFET is a single common source dual depletion mode MOSFET which is widely used in various applications. It is known for its low-power consumption and its high-frequency operation capabilities. It is used for load switching, switching speed control, audio applications and auto applications, among others.
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