NDS336P Allicdata Electronics

NDS336P Discrete Semiconductor Products

Allicdata Part #:

NDS336PTR-ND

Manufacturer Part#:

NDS336P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 1.2A SSOT3
More Detail: P-Channel 20V 1.2A (Ta) 500mW (Ta) Surface Mount S...
DataSheet: NDS336P datasheetNDS336P Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SuperSOT-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NDS336P is a single common source dual depletion mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is widely used in various applications which require both high-frequency operation and low-power consumption. In addition, it can also be used for switching, switching speed control, audio applications and automotive applications, among many others.

The NDS336P is characterized by a 20V drain-to-source voltage rating and uses a 3-pin package with a source, gate, and drain. It has a maximum drain current of 55mA, an on-state resistance of 16Ω and a typical gate threshold voltage of -4.4V. It is developed for general purpose switching and load switching applications with a wide variety of features.

The NDS336P works on the principle of a depletion mode MOSFET. This type of MOSFET utilizes the principle of Coulomb\'s Law to control the electric potential barrier at the gate by creating electric field forces on the gate region. The design of the NDS336P includes a specially designed gate region structure, which ensures a low gate to source resistance, contributing to improved on-state resistance and low power consumption.

The NDS336P can be used in various applications, depending on the particular use case. It is most commonly used for load switching applications and switching applications due to its low power consumption and on-state resistance. It can also be used in audio applications, wherein it is used to efficiently switch high frequencies signals due to its fast switching speed. It is used in automotive applications as a low-power switch due to its low gate resistance and low drain to source leakage. Lastly, the NDS336P can also be used for controlling switches, since it allows for precise control of the drain current.

In conclusion, the NDS336P MOSFET is a single common source dual depletion mode MOSFET which is widely used in various applications. It is known for its low-power consumption and its high-frequency operation capabilities. It is used for load switching, switching speed control, audio applications and auto applications, among others.

The specific data is subject to PDF, and the above content is for reference

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