Allicdata Part #: | NDS355AN_G-ND |
Manufacturer Part#: |
NDS355AN_G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.7A SSOT3 |
More Detail: | N-Channel 30V 1.7A (Ta) 500mW (Ta) Surface Mount S... |
DataSheet: | NDS355AN_G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 1.9A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 195pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SuperSOT-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDS355AN_G is a power MOSFET device designed to handle up to 37W of load power in surface mount package. This device includes a unique feature set that makes it great for use in a range of applications, from low voltage motor control applications to high voltage switching and motor control. Let\'s take a look at the various application fields for the NDS355AN_G, as well as its working principle.
Application Fields for the NDS355AN_G
The NDS355AN_G is a surface mount power device that can be used in a range of power supply and switching applications. It is mainly used in applications that require low voltage motor control, such as electric vehicles, pumps, and compressors. The NDS355AN_G also has a variety of applications in the industrial and aerospace industries, where its ability to reliably handle high voltage switching applications is invaluable. Additionally, the NDS355AN_G can be used in a range of consumer electronic applications, such as in motor controllers for small home appliances, as well as for high speed switching applications.
Working Principle of the NDS355AN_G
The NDS355AN_G is a MOSFET-based power device that is designed to handle a wide range of voltages and currents. The device is based on the principle of metal-oxide-semiconductor (MOS) transistor technology, which means that the device can be used as a switch in a variety of power circuits.
The NDS355AN_G works in a similar fashion to other power MOSFETS. It consists of two metal gate electrodes, a gate oxide layer and a silicon body. When a voltage is applied to the metal gate electrodes, a thin inversion layer is formed at the silicon-oxide interface. This inversion layer acts as a conductive channel between the metal gate electrodes, allowing current to flow between them. The size of the conducting channel that is formed depends on the applied voltage, allowing for the device to act as a switch for various voltages and currents.
The NDS355AN_G includes a unique feature set that allows for it to be used in a variety of applications. It has a low capacitance, which allows for it to operate at high speeds, and a high thermal resistance for excellent thermal performance. Additionally, the device includes a wide operating temperature range and is resistant to temperature extremes, which makes it an excellent choice for high voltage switching applications.
Conclusion
The NDS355AN_G is a power MOSFET-based device designed to handle up to 37W of load power in surface mount packages. It has a wide range of applications, such as low voltage motor control, high voltage switching, and consumer electronics. The device has a low capacitance, high thermal resistance and a wide operating temperature range, making it an ideal choice for many applications. Furthermore, the device is based on the principle of metal-oxide-semiconductor (MOS) transistor technology, which means that it can be used as a switch for various voltages and currents.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NDS331N_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.3A 3SSO... |
NDS352P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 0.85A SSO... |
NDS356P | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 1.1A SSOT... |
NDS336P | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 1.2A SSOT... |
NDS335N | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.7A SSOT... |
NDS355AN_G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 1.7A SSOT... |
NDS331N | ON Semicondu... | -- | 210000 | MOSFET N-CH 20V 1.3A SSOT... |
NDS351AN | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 1.4A SSOT... |
NDS332P | ON Semicondu... | -- | 1000 | MOSFET P-CH 20V 1A SSOT3P... |
NDS355AN | ON Semicondu... | -- | 12000 | MOSFET N-CH 30V 1.7A SSOT... |
NDS352AP | ON Semicondu... | 0.1 $ | 1000 | MOSFET P-CH 30V 0.9A SSOT... |
NDS356AP | ON Semicondu... | -- | 30000 | MOSFET P-CH 30V 1.1A SSOT... |
NDS351N | ON Semicondu... | -- | 3000 | MOSFET N-CH 30V 1.1A SSOT... |
NDS355N | ON Semicondu... | 0.18 $ | 3000 | MOSFET N-CH 30V 1.6A SSOT... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...