Allicdata Part #: | NSVMMUN2236LT1G-ND |
Manufacturer Part#: |
NSVMMUN2236LT1G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN 50V SOT23-3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | NSVMMUN2236LT1G Datasheet/PDF |
Quantity: | 1000 |
6000 +: | $ 0.03784 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 246mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSVMMUN2236LT1G is a single prefabricated, pre-biased BJT (bipolar junction transistor) with advanced features. It is built on an advanced fabrication process that ensures higher reliability and better performance characteristics. The device is also built to reduce radiation interference and reduce power consumption. The NSVMMUN2236LT1G can be used for switching applications and for linear amplifiers.
The application field of NSVMMUN2236LT1G can be found in various switching and amplifier circuits. It can be found in applications that require driving current to be transferred between two circuits such as a load switch or a power amplifier. This type of transistor can also be used in amplifier circuits such as line receivers and line drivers. It is also suitable for use in isolation circuits to prevent ground loops.
The working principle of the NSVMMUN2236LT1G involves a PN junction between base and collector which results in the transistor becoming activated when current is allowed to pass through the base. The current allowed to pass through the base determines the amount of current leaving the collector. This current from the collector then flows to the load and can be used to power the load.
In terms of its linear amplifier characteristics, the NSVMMUN2236LT1G has a voltage gain of 40 dB and is capable of delivering a maximum of 1A of current. It has an output resistance of around 10 kΩ and a power dissipation of up to 500 mW. The device has a frequency response of up to 10 MHz.
The NSVMMUN2236LT1G is suitable for use in a variety of applications, including audio amplifiers, switching applications, audio line amplifiers, and line receivers. It is also used in isolation circuits to reduce ground loops. The device is well-suited to modern applications due to its advanced fabrication process, superior performance characteristics and low power consumption.
The specific data is subject to PDF, and the above content is for reference
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